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SMLJ12A-QH

更新时间: 2024-11-24 13:13:43
品牌 Logo 应用领域
伯恩斯 - BOURNS 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
5页 205K
描述
Trans Voltage Suppressor Diode,

SMLJ12A-QH 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantFactory Lead Time:14 weeks
风险等级:5.7二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码:e3湿度敏感等级:1
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Matte Tin (Sn)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SMLJ12A-QH 数据手册

 浏览型号SMLJ12A-QH的Datasheet PDF文件第2页浏览型号SMLJ12A-QH的Datasheet PDF文件第3页浏览型号SMLJ12A-QH的Datasheet PDF文件第4页浏览型号SMLJ12A-QH的Datasheet PDF文件第5页 
Features  
Applications  
RoHS compliant*  
IEC 61000-4-2 ESD (Min. Level 4)  
IEC 61000-4-4 EFT  
Surface Mount SMC package  
Standoff Voltage: 5.0 to 170 volts  
Power Dissipation: 3000 watts  
IEC 61000-4-5 Surge  
SMLJ Transient Voltage Suppressor Diode Series  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop  
increasingly smaller electronic components.  
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AB (SMC)  
size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 170 V and Breakdown  
Voltage up to 200 V. Typical fast response times are less than 1.0 ns for unidirectional devices and less than 5.0 ns for bidirectional devices  
from 0 V to Minimum Breakdown Voltage.  
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration  
minimizes roll away.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
Value  
Unit  
(Note 1,2)  
Minimum Peak Pulse Power Dissipation (T = 1 ms)  
P
P
3000  
Watts  
PK  
Peak Forward Surge Current  
8.3 ms Single Ha Sine Wave Superimposed on Rated Load  
(JEDEC Method)  
I
300  
Amps  
FSM  
(Note 3)  
Steady State Power Dissipation @ TL = 75 °C  
P
5.0  
Watts  
Volts  
M(AV)  
Maximum Instantaneous Forward Voltage @ I = 100 A  
PP  
(Note 5)  
V
F
J
(For Unidirectional Units Only)  
Operating Temperature Range  
Storage Temperature Range  
T
-55 to +150  
-55 to +175  
°C  
°C  
T
STG  
1. Non-repetitive current pulse, per Pulse Waveform graph and derated above T = 25 °C per Pulse Derating Curve.  
A
2. Thermal Resistance Junction to Lead.  
3. 8.3 ms Single Ha-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).  
4. Single Phase, Ha Wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20 %.  
5.  
V
= 3.5 V on SMLJ5.0A through SMLJ90A and V = 5.0 V on SMLJ100A through SMLJ170A.  
F
F
How to Order  
SMLJ 5.0 CA  
Package  
SMLJ = SMC/DO-214AB  
Working Peak Reverse Voltage  
5.0 = 5.0 V  
(Volts)  
RWM  
Suffix  
A = 5 % Tolerance Unidirectional Device  
CA = 5 % Tolerance Bidirectional Device  
Asia-Pacific:  
Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116  
Europe:  
Tel: +41-41 768 5555 • Fax: +41-41 768 5510  
The Americas:  
Tel: +1-951 781-5500 • Fax: +1-951 781-5700  
www.bourns.com  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

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