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SMLJ120A

更新时间： 2024-11-25 02:54:19
品牌 Logo 应用领域
伯恩斯 - BOURNS 局域网光电二极管
页数 文件大小 规格书
5页 205K
描述
SMLJ Transient Voltage Suppressor Diode Series

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中文翻译

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SMLJ120A 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-214AB
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：1.2
Is Samacsys：N最大击穿电压：147 V
最小击穿电压：133 V击穿电压标称值：140 V
最大钳位电压：193 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214ABJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：3000 W元件数量：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
认证状态：Not Qualified最大重复峰值反向电压：120 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

SMLJ120A 数据手册

 浏览型号SMLJ120A的Datasheet PDF文件第2页浏览型号SMLJ120A的Datasheet PDF文件第3页浏览型号SMLJ120A的Datasheet PDF文件第4页浏览型号SMLJ120A的Datasheet PDF文件第5页 
Features  
Applications  
■ RoHS compliant*  
■ IEC 61000-4-2 ESD (Min. Level 4)  
■ IEC 61000-4-4 EFT  
■ Surface Mount SMC package  
■ Standoff Voltage: 5.0 to 170 volts  
■ Power Dissipation: 3000 watts  
■ IEC 61000-4-5 Surge  
SMLJ Transient Voltage Suppressor Diode Series  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop  
increasingly smaller electronic components.  
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AB (SMC)  
size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 170 V and Breakdown  
Voltage up to 200 V. Typical fast response times are less than 1.0 ns for unidirectional devices and less than 5.0 ns for bidirectional devices  
from 0 V to Minimum Breakdown Voltage.  
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration  
minimizes roll away.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
Value  
Unit  
(Note 1,2)  
Minimum Peak Pulse Power Dissipation (T = 1 ms)  
P
P
3000  
Watts  
PK  
Peak Forward Surge Current  
8.3 ms Single Ha Sine Wave Superimposed on Rated Load  
(JEDEC Method)  
I
300  
Amps  
FSM  
(Note 3)  
Steady State Power Dissipation @ TL = 75 °C  
P
5.0  
Watts  
Volts  
M(AV)  
Maximum Instantaneous Forward Voltage @ I = 100 A  
PP  
(Note 5)  
V
F
J
(For Unidirectional Units Only)  
Operating Temperature Range  
Storage Temperature Range  
T
-55 to +150  
-55 to +175  
°C  
°C  
T
STG  
1. Non-repetitive current pulse, per Pulse Waveform graph and derated above T = 25 °C per Pulse Derating Curve.  
A
2. Thermal Resistance Junction to Lead.  
3. 8.3 ms Single Ha-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).  
4. Single Phase, Ha Wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20 %.  
5.  
V
= 3.5 V on SMLJ5.0A through SMLJ90A and V = 5.0 V on SMLJ100A through SMLJ170A.  
F
F
How to Order  
SMLJ 5.0 CA  
Package  
SMLJ = SMC/DO-214AB  
Working Peak Reverse Voltage  
5.0 = 5.0 V  
(Volts)  
RWM  
Suffix  
A = 5 % Tolerance Unidirectional Device  
CA = 5 % Tolerance Bidirectional Device  
Asia-Pacific:  
Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116  
Europe:  
Tel: +41-41 768 5555 • Fax: +41-41 768 5510  
The Americas:  
Tel: +1-951 781-5500 • Fax: +1-951 781-5700  
www.bourns.com  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
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中文翻译

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SMLJ120A 替代型号

型号 品牌 替代类型 描述 数据表
SMLJ120A MICROSEMI

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3SMC120A CENTRAL

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