Datasheet > SML20B56

SML20B56

更新时间： 2022-11-25 12:37:15

品牌	Logo	应用领域
SEME-LAB		高压高电压电源
页数	文件大小	规格书
2页	29K
描述
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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SML20B56 数据手册

SML20W65

TO–267 Package Outline.

Dimensions in mm (inches)

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

V_DSS

200V

65A

I_D(cont)

Ω

R_DS(on)0.026

• Faster Switching

• Lower Leakage

• TO–267 Hermetic Package

StarMOS is a new generation of high voltage

N–Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect,

increases packing density and reduces the

on-resistance. StarMOS also achieves faster

switching speeds through optimised gate layout.

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

case

Drain – Source Voltage

200

DSS

Continuous Drain Current

1 3

Pulsed Drain Current

260

Gate – Source Voltage

±30

Gate – Source Voltage Transient

±40

GSM

Total Power Dissipation @ T

Derate Linearly

= 25°C

400

case

3.2

W/°C

Operating and Storage Junction Temperature Range

–55 to 150

300

T , T

STG

°C

Lead Temperature : 0.063” from Case for 10 Sec.

1 3

Avalanche Current

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

2500

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Starting T = 25°C, L = 1.18mH, R = 25Ω, Peak I = 65A

3) Maximum current limited by package.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

6/99

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

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