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SMF12A/G1 PDF预览

SMF12A/G1

更新时间: 2024-11-12 19:53:55
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 125K
描述
Trans Voltage Suppressor Diode, 12V V(RWM), Unidirectional,

SMF12A/G1 数据手册

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SMF5.0A to SMF51A  
VISHAY  
Vishay Semiconductors  
Surface Mount ESD Protection Diodes  
\
Features  
• For surface mounted applications  
• Low-profile package  
• Optimized for LAN protection applications  
• Ideal for ESD protection of data lines in  
accordance with IEC 1000-4-2 (IEC801-2)  
• Ideal for EFT protection of data lines in  
accordance with IEC 1000-4-4 (IEC801-4)  
• IEC 1000-4-2 (ESD) 15 kV (air) 8 kV (contact)  
IEC 1000-4-4 (EFT) 40 A (tp = 5/ 50 ns)  
IEC 1000-4-5 (Lightning) 24 A (tp = 8/ 20 µs)  
• Low incremental surge resistance, excellent  
clamping capability  
Terminals: Solder plated, solderable per  
MIL-STD-750, Method 2026  
• 200 W peak pulse power capability with a  
10/1000 µs waveform, repetition rate  
(duty cycle): 0.01 %  
Polarity:The band denotes the cathode, which is  
positive with respect to the anode under normal  
TVS operation  
• Very fast response time  
Mounting Position: Any  
• High temperature soldering guaranteed:  
260 °C/ 10 seconds at terminals  
Weight: approx. 0.00035 oz, 0.01g  
Packaging Codes/Options:  
G1/10 K per 13 " reel (8 mm tape), 50 K/box  
G2/3 K per 7 " reel (8 mm tape), 30 K/box  
Mechanical Data  
Case: JEDEC DO-219-AB (SMF) Plastic case  
Absolute Maximum Ratings  
Ratings at 25 °C, ambient temperature unless otherwise specified  
Parameter  
Test condition  
Symbol  
PPPM  
Value  
200  
Unit  
W
10/1000 µs waveform1)  
8/20 µs waveform1)  
10/1000 µs waveform1)  
Peak pulse power dissipation  
PPPM  
IPPM  
1000  
W
A
Peak pulse current  
next  
Table  
Peak forward surge current  
8.3 ms single half sine-wave  
IFSM  
20  
A
1) Non-repetitive current pulse and derated above TA = 25 °C  
Maximum Thermal Resistance  
Ratings at 25 °C, ambient temperature unless otherwise specified  
Parameter  
Symbol  
RthJA  
Value  
Unit  
K/W  
Thermal resistance2)  
180  
Operation junction and storage  
temperature range  
Tstg, TJ  
- 55 to + 150  
°C  
2) Mounted on epoxy substrate with 3 x 3 mm, cu pads (40 µm thick)  
Document Number 85811  
Rev. 3, 21-Feb-03  
www.vishay.com  
1

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