是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | SOD |
包装说明: | R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.47 |
Is Samacsys: | N | 最小击穿电压: | 4 V |
配置: | SEPARATE, 4 ELEMENTS | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e0 | 最大非重复峰值反向功率耗散: | 500 W |
元件数量: | 4 | 端子数量: | 8 |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | BIDIRECTIONAL | 最大重复峰值反向电压: | 3.3 V |
表面贴装: | YES | 技术: | AVALANCHE |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMDB03C/TR13 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 3.3V V(RWM), Bidirectional, 4 Element, Silicon, PLAS | |
SMDB03CE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 3.3V V(RWM), Bidirectional, 4 Element, Silicon, ROHS | |
SMDB03CE3/TR13 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 3.3V V(RWM), Bidirectional, 4 Element, Silicon, ROHS | |
SMDB03C-TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 3.3V V(RWM), Bidirectional, 4 Element, Silicon, PLAS | |
SMDB03E3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 3.3V V(RWM), Unidirectional, 4 Element, Silicon, ROH | |
SMDB03E3/TR13 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 3.3V V(RWM), Unidirectional, 4 Element, Silicon, ROH | |
SMDB03-G | SENSITRON |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 3.3V V(RWM), Unidirectional, 4 Element, Silicon, LEA | |
SMDB03LCC | SMC |
获取价格 |
SO-8 | |
SMDB03LCCTR | ETC |
获取价格 |
TVS DIODE 3.3V 7V 8SO | |
SMDB03TR | ETC |
获取价格 |
TVS DIODE 3.3V 7V 8SO |