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SMDB05C/TR13 PDF预览

SMDB05C/TR13

更新时间： 2024-11-22 10:08:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
2页 125K
描述
Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 4 Element, Silicon, PLASTIC, SOP-8

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SMDB05C/TR13 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Transferred零件包装代码：SOD
包装说明：PLASTIC, SOP-8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.66
最小击穿电压：6 V配置：SEPARATE, 4 ELEMENTS
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
最大非重复峰值反向功率耗散：500 W元件数量：4
端子数量：8最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
最大重复峰值反向电压：5 V表面贴装：YES
技术：AVALANCHE端子面层：TIN LEAD
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED

SMDB05C/TR13 数据手册

 浏览型号SMDB05C/TR13的Datasheet PDF文件第2页 
SMDA03 thru SMDA24C, e3  
and SMDB03 thru SMDB24C, e3  
4 LINE TVSarray ™  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This TRANSIENT VOLTAGE SUPPRESSOR (TVS) array is packaged in an SO-8  
configuration giving protection to 4 unidirectional or bi-directional data or interface  
lines. It is designed for use in applications where protection is required at the board  
level from voltage transients caused by electrostatic discharge (ESD) as defined in  
IEC 61000-4-2, electrical fast transients (EFT) per IEC 61000-4-4 and effects of  
secondary lightning. These TVS arrays have peak pulse power ratings of 300 watts  
(SMDA) and 500 watts (SMDB) for an 8/20 µsec pulse. They are suitable for  
protection of sensitive circuitry consisting of TTL, CMOS, DRAM’s, SRAM’s,  
HCMOS, HSIC and low-voltage interfaces from 3.3 volts to 24 volts  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
PACKAGING  
•
•
•
•
Protects 3.0/3.3 volt up to 24 volt components  
Protects 4 unidirectional or bidirectional lines  
Provides electrically-isolated protection  
•
•
•
Tape & Reel per EIA Standard 481  
13 inch reel; 2,500 pieces (STANDARD)  
Carrier tubes; 95 pcs (OPTIONAL)  
RoHS Compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL  
•
•
•
•
•
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
SMDA Peak Pulse Power: 300 watts (Fig. 1 and 2)  
SMDB Peak Pulse Power: 500 watts (Fig. 1 and 2)  
Pulse Repetition Rate: <.01%  
•
•
CASE: Void-free transfer molded thermosetting epoxy  
compound meeting UL 94V-0 flammability classification  
TERMINALS: Tin-Lead or RoHS Compliant annealed  
matte-Tin plating solderable per MIL-STD-750 method  
2026  
WEIGHT: 0.066 grams (approximate)  
MARKING: MSC Logo, device marking code*, date code  
Pin #1 defined by dot on top of package  
•
•
•
ELECTRICAL CHARACTERISTICS PER LINE @ 25oC Unless otherwise specified  
BREAKDOWN  
VOLTAGE  
CLAMPING  
VOLTAGE  
CLAMPING  
VOLTAGE  
STANDBY  
(LEAKAGE)  
CURRENT  
TEMPERATURE  
COEFFICIENT  
STAND OFF  
VOLTAGE  
CAPACITANCE  
f =1 MHz  
C
VBR  
VC  
VC  
of VBR  
VWM  
DEVICE  
MARKING  
CODE *  
ID  
αVBR  
PART  
NUMBER  
@0V  
pF  
I
BR = 1 mA  
VOLTS  
MIN  
IPP = 1 A  
IPP = 5 A  
@VWM  
(Figure 2)  
VOLTS  
(Figure 2)  
VOLTS  
VOLTS  
MAX  
µA  
mV/°C  
TYP  
MAX  
MAX  
MAX  
TYP  
SMDA03  
SMDA03C  
SMDB03  
SMDB03C  
SMDA05  
SMDA05C  
SMDB05  
SMDB05C  
SMDA12  
SMDA12C  
SMDB12  
SMDB12C  
SMDA15  
SMDA15C  
SMDB15  
SMDB15C  
SMDA24  
SMDA24C  
SMDB24  
SMDB24C  
SDK  
SDL  
PDK  
PDL  
SDA  
SDB  
PDA  
PDB  
SDC  
SDD  
PDC  
PDD  
SDE  
SDF  
PDE  
PDF  
SDG  
SDH  
PDG  
PDH  
3.3  
3.3  
3.3  
3.3  
5.0  
5.0  
5.0  
5.0  
12.0  
12.0  
12.0  
12.0  
15.0  
15.0  
15.0  
15.0  
24.0  
24.0  
24.0  
24.0  
4
4
4
4
6
6
6
6
13.3  
13.3  
13.3  
13.3  
16.7  
16.7  
16.7  
16.7  
26.7  
26.7  
26.7  
26.7  
7
7
7
7
9
9
9
9
200  
400  
200  
400  
20  
40  
20  
40  
1
1
1
1
1
1
1
1
1
1
1
1
600  
300  
600  
300  
400  
200  
400  
200  
185  
95  
185  
95  
140  
70  
-3  
-5  
-3  
-5  
3
1
3
1
10  
8
10  
8
13  
11  
13  
11  
30  
28  
30  
28  
9.8  
9.8  
9.8  
9.8  
19  
19  
19  
19  
24  
24  
24  
24  
43  
43  
43  
43  
11  
11  
11  
11  
24  
24  
24  
24  
30  
30  
30  
30  
55  
55  
55  
55  
140  
70  
90  
45  
90  
45  
Note: Transient Voltage Suppressor (TVS) product is normally selected based on its stand off voltage VWM. Product selected voltage should be equal to or  
greater than the continuous peak operating voltage of the circuit to be protected. Part numbers with a C suffix are bi-directional devices.  
* Device marking has an e3 suffix added for the RoHS Compliant options, e.g. SDKe3, SDLe3, SDCe3, SDEe3, PDHe3, etc.  
Copyright © 2005  
Microsemi  
Page 1  
11-11-2005 REV R  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

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SMDB05C/TR13 替代型号

型号 品牌 替代类型 描述 数据表
SMDA05C/TR13 MICROSEMI

完全替代

 Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Bidirectional, 4 Element, Silicon, PLASTI

与SMDB05C/TR13相关器件

型号 品牌 获取价格 描述 数据表
SMDB05CE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 4 Element, Silicon, ROHS C
SMDB05CE3/TR13 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 4 Element, Silicon, ROHS C
SMDB05C-G SENSITRON

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 		Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 4 Element, Silicon, LEAD F
SMDB05C-LFT7 PROTEC

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 		800 WATT MULTI-LINE TVS ARRAY
SMDB05C-T7-LF PROTEC

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 		Trans Voltage Suppressor Diode, 800W, 5V V(RWM), Bidirectional, 4 Element, Silicon, ROHS A
SMDB05C-TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 4 Element, Silicon, PLASTI
SMDB05C-TR3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 4 Element, Silicon, PLASTI
SMDB05E3/TR13 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 4 Element, Silicon, ROHS
SMDB05-G SENSITRON

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 		Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 4 Element, Silicon, LEAD
SMDB05LCC SMC

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 		SO-8

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