Datasheet > SMCJ8.5-M3/9AT

SMCJ8.5-M3/9AT

更新时间： 2024-11-05 21:02:07

品牌	Logo	应用领域
威世 - VISHAY		光电二极管
页数	文件大小	规格书
6页	93K
描述
Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMC, 2 PIN

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SMCJ8.5-M3/9AT 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DO-214AB	包装说明：	R-PDSO-C2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.6	Is Samacsys：	N
Base Number Matches：	1

SMCJ8.5-M3/9AT 数据手册

New Product

SMCJ5.0 thru SMCJ188CA

Vishay General Semiconductor

Surface Mount TRANSZORB Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

DO-214AB (SMC)

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

PRIMARY CHARACTERISTICS

V_WM

5.0 V to 188 V

TYPICAL APPLICATIONS

P_PPM

1500 W

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

I_FSM(uni-directional only)

T_Jmax.

200 A

150 °C

MECHANICAL DATA

Case: DO-214AB (SMCJ)

Molding compound meets UL 94 V-0 flammability rating

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional use C or CA suffix (e.g. SMCJ188CA).

Electrical characteristics apply in both directions.

Base P/N-M3

commercial grade

- halogen-free, RoHS compliant, and

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

1500

UNIT

(1)(2)

Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)

Peak pulse current with a 10/1000 μs waveform

P_PPM

(1)

I_PPM

See next table

200

(2)

Peak forward surge current 8.3 ms single half sine-wave uni-directional only

Power dissipation on infinite heatsink, T_A= 50 °C

Operating junction and storage temperature range

I_FSM

P_D

6.5

T_J, T_STG

- 55 to + 150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal

(2)

Document Number: 89331

Revision: 20-Apr-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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与SMCJ8.5-M3/9AT相关器件

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SMCJ80	LGE	获取价格	暂无描述
SMCJ80	HOTTECH	获取价格	SMC(DO-214AB)
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SMCJ80A	MICROSEMI	获取价格	UNIDIRECTIONAL AND BIDIRECTIONAL SURFACE MOUNT
SMCJ80A	YANGJIE	获取价格	SMC
SMCJ80A	HOTTECH	获取价格	SMC(DO-214AB)
SMCJ80AHE3	MCC	获取价格	Tape&Reel: 3Kpcs/Reel;

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