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SMCJ6072A/TR13 PDF预览

SMCJ6072A/TR13

更新时间: 2024-11-06 18:29:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
3页 159K
描述
Trans Voltage Suppressor Diode, 1500W, 185V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB, PLASTIC PACKAGE-2

SMCJ6072A/TR13 技术参数

是否Rohs认证:不符合生命周期:Active
零件包装代码:DO-214AB包装说明:R-PDSO-C2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.53Is Samacsys:N
其他特性:LOW INDUCTANCE最大击穿电压:231 V
最小击穿电压:209 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ABJESD-30 代码:R-PDSO-C2
JESD-609代码:e0最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified最大重复峰值反向电压:185 V
表面贴装:YES技术:AVALANCHE
端子面层:TIN LEAD端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SMCJ6072A/TR13 数据手册

 浏览型号SMCJ6072A/TR13的Datasheet PDF文件第2页浏览型号SMCJ6072A/TR13的Datasheet PDF文件第3页 
SMCG6036 thru SMCG6072A, e3  
and SMCJ6036 thru SMCJ6072A, e3  
Bidirectional Transient Voltage Suppressor  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These surface mount Transient Voltage Suppressors (TVSs) are electrically equivalent to  
the 1N6036 thru 1N6072A JEDEC registered axial-leaded devices. They are are used for  
protecting sensitive components requiring low clamping voltage levels and are also  
available as RoHS Compliant with an e3 suffix. They are rated at high current impulses  
typically generated by inductive switching transients. Other benefits are achieved with  
low-profile surface mount J-bend or Gull-wing terminals for stress-relief and lower weight.  
Its low-flat profile provides easier insertion or automatic handling benefits compared to  
other MELF style packages. Options for screening similar to JAN, JANTX, JANTXV, and  
JANS also exist by using MQ, MX, MV or MSP prefixes respectively for part numbers and  
high reliability screening in accordance with MIL-PRF-19500/507.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Thermally efficient surface mount with J-bends or Gull  
wing terminations for stress relief (flat handling surface  
and easier placement)  
Working Standoff Voltages: 5.5 volts to 185 volts  
Metallurgically bonded  
For high reliability transient voltage suppression in  
low profile surface mount locations requiring easy  
placement and strain relief  
Optional 100% screening for avionics grade is  
available by adding MA prefix to part number for added  
100% temperature cycle -55oC to +125oC (10X) as well  
Light weight for airborne or satellite applications  
as surge (3X) and 24 hours HTRB with post test VBR  
ID (both directions for bidirectional)  
&
Superior surge quality to protect from ESD and EFT  
transients per IEC61000-4-2 and -4-4  
Options for screening in accordance with MIL-PRF-  
Lightning surge protection per IEC61000-4-5 for Class  
1 and 2 with source impedance of 42 Ohms as well as  
Class 3 and 4 selectively at lower voltages (VWM) and  
higher surge current (IPP) ratings herein  
19500/507 for JAN, JANTX, and JANTXV are available  
by adding MQ, MX, or MV prefixes to part numbers  
respectively. For example, designate a MXSMCJ6036A  
for a JANTX screen.  
Protects sensitive components such as ICs, CMOS,  
Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
RoHS Compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Operating temperature: -55°C to +150°C  
Storage temperature: -55°C to +150°C  
Molded epoxy package meets UL94V-0  
Terminals: Gullwing or C-bend (modified J-bend)  
leads, tin-lead or RoHS compliant annealed matte-tin  
plating solderable to MIL-STD-750, method 2026  
Body marked with P/N without SMCJ or SMCG (e.g.  
6036A, 6036Ae3, MA6036A, 6039, 6053, 6053e3, etc.)  
No polarity band is shown on these bi-directional types  
Weight: 0.25 grams (approximate)  
1500 Watts of Peak Pulse Power at 10/1000 µs as  
shown in Figure 3 (see Figure 1 for other tP values)  
Thermal resistance, RθJL = 20°C/W  
Impulse repetition rate (duty factor): 0.01%  
5.0 Watt steady-state maximum power at TL =25°C  
t
clamping (0V to V(BR) min): less than 5 ns  
Tape & Reel packaging per EIA-481 (2500 units/reel)  
Solder temperatures: 260 °C for 10 s (maximum)  
ELECTRICAL CHARACTERISTICS @ 25oC (Test Both Polarities)  
Maximum  
Rated  
Stand-off  
Voltage  
(Note 1)  
VWM  
Volts  
5.5  
6.0  
6.5  
7.0  
7.0  
7.5  
8.0  
8.5  
8.5  
9.0  
9.0  
10.0  
Clamping  
Voltage  
@ IPP  
Maximum  
Standby  
Current  
@ VWM  
ID  
Maximum  
Peak Pulse  
Current  
(Fig. 2)  
IPP  
A
128  
132  
120  
124  
109  
112  
100  
103  
93  
Maximum  
Temperature  
Coefficient  
of V(BR)  
αV(BR)  
%/oC  
MICROSEMI  
Part Number  
MICROSEMI  
Part Number  
Breakdown  
Voltage*  
(10/1000 µs)  
Modified  
“G”  
Modified  
“J”  
V(BR)  
@
I(BR)  
mA  
10  
10  
10  
10  
10  
10  
1
1
1
1
1
VC  
Volts  
11.7  
11.3  
12.5  
12.1  
13.8  
13.4  
15.0  
14.5  
16.2  
15.6  
17.3  
16.7  
Bend Lead  
SMCG6036  
SMCG6036A  
SMCG6037  
SMCG6037A  
SMCG6038  
SMCG6038A  
SMCG6039  
SMCG6039A  
SMCG6040  
SMCG6040A  
SMCG6041  
SMCG6041A  
Bend Lead  
SMCJ6036  
SMCJ6036A  
SMCJ6037  
SMCJ6037A  
SMCJ6038  
SMCJ6038A  
SMCJ6039  
SMCJ6039A  
SMCJ6040  
SMCJ6040A  
SMCJ6041  
SMCJ6041A  
Volts  
μA  
6.75 - 8.25  
7.13 - 7.88  
7.38 - 9.02  
7.79 - 8.61  
8.19 - 10.00  
8.65 - 9.55  
1000  
1000  
500  
500  
200  
200  
50  
50  
10  
.061  
.061  
.065  
.065  
.068  
.068  
.073  
.073  
.075  
.075  
.078  
.078  
9.0  
9.5  
9.9  
-
-
-
11.0  
10.5  
12.1  
10.5 - 11.6  
10.8 - 13.2  
11.4 - 12.6  
10  
5
5
96  
87  
90  
1
Copyright © 2007  
6-21-2007 REV C  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

SMCJ6072A/TR13 替代型号

型号 品牌 替代类型 描述 数据表
SMCJ6072AE3/TR13 MICROSEMI

完全替代

Trans Voltage Suppressor Diode, 1500W, 185V V(RWM), Bidirectional, 1 Element, Silicon, DO-
SMCG6072AE3/TR13 MICROSEMI

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