Datasheet > SMCJ58CA-HRAT7

SMCJ58CA-HRAT7

更新时间： 2024-11-05 22:54:27

品牌	Logo	应用领域
力特 - LITTELFUSE		电视
页数	文件大小	规格书
6页	742K
描述
TVS DIODE 58V 93.6V DO214AB

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

SMCJ58CA-HRAT7 数据手册

TVS Diodes

Surface Mount – 1500W > SMCJ-HRA Series

Pb e3

RoHS

SMCJ-HRA Series

Description

The SMCJ-HRA High Reliability series is designed

speciﬁcally to protect sensitive electronic equipment from

voltage transients induced by lightning and other transient

voltage events. These are available with a variety of up-

screening options for enhanced reliability.

Uni-directional

Bi-directional

Agency Approvals

Features

• High reliability devices

with fabrication and

assembly lots traceability

• Excellent clamping

capability

• Low incremental surge

resistance

• Typical I_Rless than 1µA

above 12V

• HighTemperature

soldering guaranteed:

260°C/40 seconds at

terminals

• Plastic package has

Underwriters laboratory

ﬂammability 94V-O

• Meet MSL level1, per

J-STD-020, LF maximun

peak of 260°C

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

• 2nd level interconnect is

Pb-free per IPC/JEDEC

J-STD-609A.01

Agency

Agency File Number

E230531

• Enhanced reliability

screening options are

available in reference to

MIL-PRF-19500. Refer to

screen process table for

more detail on screening

options

• For surface mounted

applications to optimize

board space

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

Parameter

Symbol Value Unit

Peak Pulse Power Dissipation atT_A=25ºC by

10/1000µs waveform (Fig.1)(Note 1), (Note 2)

Power Dissipation on inﬁnite heat sink atT_A=50^OC P_M(AV)

P_PPM

1500

6.5

Peak Forward Surge Current, 8.3ms Single Half

Sine Wave (Note 3)

Maximum Instantaneous Forward Voltage at

100A for Unidirectional only (Note 4)

Operating Junction and StorageTemperature

Range

I_FSM

200

• Low proﬁle package

• Built-in strain relief

V_F

3.5/5.0

• V_BR@T_J= V_BR@25°C x (1+αT x

(T_J- 25))

T_J, T_STG-65 to 150 °C

TypicalThermal Resistance Junction to Lead

R_uJL

R_uJA

°C/W

(αT:Temperature Coefﬁcient)

TypicalThermal Resistance Junction to Ambient

• Glass passivated chip

junction

• 1500W peak pulse power

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

Notes:

1. Non-repetitive current pulse, per Fig. 3 and derated above T

2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only, duty

cycle=4 per minute maximum.

= 25^OC per Fig. 2.

4. VF

<3.5V for V^BR

_200V and V <5.0V for V^BR>_201V.

• Recognized to UL 497B as

an Isolated Loop Circuit

Protector

• Fast response time:

typically less than 1.0ps

from 0V to BV min

Functional Diagram

Applications

SMCJ-HRA devices are ideal for the high reliability

protection of I/O Interfaces, V_CCbus and other vulnerable

circuits used inTelecom, Computer, Industrial and

Consumer electronic applications.

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 02/14/20

12 3 4 5 6

中文翻译

下载PDF

SMCJ58CA-HRAT7 替代型号

型号	品牌	替代类型	描述	数据表
SMCJ58CA-HR	LITTELFUSE	完全替代	TVS DIODE 58V 93.6V DO214AB
SMCJ58CA	LITTELFUSE	完全替代	Silicon Avalanche Diodes - 1500W Surface Mount Transient Voltage Supressors

与SMCJ58CA-HRAT7相关器件

型号	品牌	获取价格	描述	数据表
SMCJ58CA-M3/57T	VISHAY	获取价格	TVS DIODE 58V 93.6V DO214AB
SMCJ58CA-M3/9AT	VISHAY	获取价格	TVS DIODE 58V 93.6V DO214AB
SMCJ58CAP5	FAIRCHILD	获取价格	Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon, DO-214AB, SMC, 2
SMCJ58CAQ	DIODES	获取价格	1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SMCJ58CAQ	MCC	获取价格	Tape :3K/Reel, 48K/Ctn;
SMCJ58CAQ	YANGJIE	获取价格	SMC
SMCJ58CA-Q	BOURNS	获取价格	Transient Voltage Suppressor Diode Series
SMCJ58CA-Q1	ANBON	获取价格	SMC
SMCJ58CA-TP	MCC	获取价格	Trans Voltage Suppressor Diode, 1500W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMCJ58CA-TP-HF	MCC	获取价格	Trans Voltage Suppressor Diode, 1500W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-2

与SMCJ58CA-HRAT7相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

SMCJ58CA-HRAT7

SMCJ58CA-HRAT7 数据手册

SMCJ58CA-HRAT7 替代型号

与SMCJ58CA-HRAT7相关器件

与SMCJ58CA-HRAT7相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMCJ58CA-HRAT7

SMCJ58CA-HRAT7 数据手册

SMCJ58CA-HRAT7 替代型号

与SMCJ58CA-HRAT7相关器件

与SMCJ58CA-HRAT7相关文章

您还可以找

您在本页遇到什么问题？