Datasheet > SMCJ58C-E3

SMCJ58C-E3

更新时间： 2024-11-20 04:28:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	93K
描述
Trans Voltage Suppressor Diode, 58V V(RWM), Bidirectional,

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SMCJ58C-E3 数据手册

SMCJ5.0 thru 188CA

Vishay Semiconductors

formerly General Semiconductor

Surface Mount TRANSZORB^®

Transient Voltage Suppressors

Stand-off Voltage 5.0 to 188V

Peak Pulse Power 1500W

Cathode Band

DO-214AB

(SMC J-Bend)

0.126 (3.20)

0.114 (2.90)

0.245 (6.22)

0.220 (5.59)

Mounting Pad Layout

0.185 MAX.

(4.69 MAX.)

0.280 (7.11)

0.260 (6.60)

0.126 MIN.

(3.20 MIN.)

0.012 (0.305)

0.006 (0.152)

0.103 (2.62)

0.079 (2.06)

0.060 MIN.

(1.52 MIN.)

0.060 (1.52)

0.030 (0.76)

Dimensions in inches

and (millimeters)

0.008

(0.203)

Max.

0.320 REF

0.320 (8.13)

0.305 (7.75)

Features

Mechanical Data

• Underwriters Laboratory Recognition under UL standard

for safety 497B: Isolated Loop Circuit Protection

Case: JEDEC DO-214AB molded plastic over

passivated junction

• Low profile package with built-in strain relief for

surface mounted applications

Terminals: Solder plated, solderable per

MIL-STD-750, Method 2026

• Glass passivated junction

• Low incremental surge resistance, excellent clamping

capability

Polarity: For unidirectional types the band denotes the

cathode, which is positive with respect to the anode

under normal TVS operation

• 1500W peak pulse power capability with a 10/1000µs

waveform, repetition rate (duty cycle): 0.01%

• Very fast response time

Weight: 0.007 oz., 0.21 g

Flammability: Epoxy is rated UL 94V-0

• High temperature soldering guaranteed:

250°C/10 seconds at terminals

Devices for Bidirectional Applications

For bi-directional devices, use suffix C or CA (e.g. SMCJ10C, SMCJ10CA). Electrical characteristics apply in both directions.

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

P_PPM

I_PPM

Value

Minimum 1500

See Next Table

200

Unit

Peak pulse power dissipation with

a 10/1000µs waveform⁽¹⁾⁽²⁾

Peak pulse current with a 10/1000µs waveform⁽¹⁾

Peak forward surge current 8.3ms single half sine-wave⁽²⁾

uni-directional only

I_FSM

Typical thermal resistance, junction to ambient⁽³⁾

R_θJA

R_θJL

°C/W

°C

Typical thermal resistance, junction to lead

Operating junction and storage temperature range

T_J, T_STG

–55 to +150

Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above T_A= 25°C per Fig. 2

(2) Mounted on 0.31 x 0.31” (8.0 x 8.0mm) copper pads to each terminal

(3) Mounted on minimum recommended pad layout

Document Number 88394

07-Jul-04

www.vishay.com

12 3 4 5

中文翻译

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与SMCJ58C-E3相关器件

型号	品牌	获取价格	描述	数据表
SMCJ58C-E3/57T	VISHAY	获取价格	Trans Voltage Suppressor Diode, 58V V(RWM), Bidirectional,
SMCJ58C-E3/9A	VISHAY	获取价格	Trans Voltage Suppressor Diode
SMCJ58CE3TR	MICROSEMI	获取价格	1500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN
SMCJ58C-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 1500W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMCJ58C-GT3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 1500W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMCJ58CHE3/9AT	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMCJ58CHR	DIGITRON	获取价格	Trans Voltage Suppressor Diode
SMCJ58C-M3/9AT	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMCJ58C-T3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 1500W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMCJ58CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-2

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