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SMCJ58HE3/9AT PDF预览

SMCJ58HE3/9AT

更新时间: 2024-11-01 10:24:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 106K
描述
Trans Voltage Suppressor Diode, 1500W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN

SMCJ58HE3/9AT 数据手册

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SMCJ5.0 thru SMCJ188CA  
Vishay General Semiconductor  
Surface Mount TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available inuni-directional and bi-directional  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum  
DO-214AB (SMC)  
peak of 260 °C  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VWM  
5.0 V to 188 V  
1500 W  
6.5 W  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive and  
telecommunication.  
PPPM  
PD  
I
FSM (uni-directional only)  
TJ max.  
200 A  
150 °C  
MECHANICAL DATA  
Case: DO-214AB (SMCJ)  
Molding compound meets UL 94 V-0 flammability  
rating  
DEVICES FOR BI-DIRECTION APPLICATIONS  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, high reliability/  
automotive grade (AEC Q101 qualified)  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
For bi-directional devices use C or CA suffix  
(e.g. SMCJ188CA).  
Electrical characteristics apply in both directions.  
E3 suffix meets JESD 201 class 1A whisker test, HE3  
suffix meets JESD 201 class 2 whisker test  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
1500  
UNIT  
W
Peak pulse power dissipation with a 10/1000 µs waveform (1)(2)  
Peak pulse current with a 10/1000 µs waveform (1)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Power dissipation on infinite heatsink, TA = 50 °C  
Operating junction and storage temperature range  
See next table  
200  
A
IFSM  
A
PD  
6.5  
W
TJ, TSTG  
- 55 to + 150  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Mounted on 0.31 x 0.31" (8.0 x 8.0 mm) copper pads to each terminal  
Document Number: 88394  
Revision: 21-Oct-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

SMCJ58HE3/9AT 替代型号

型号 品牌 替代类型 描述 数据表
SMCJ58AHE3/9AT VISHAY

完全替代

TVS DIODE 58V 93.6V DO214AB

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