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SMCJ58C-M3/9AT PDF预览

SMCJ58C-M3/9AT

更新时间： 2024-11-20 06:12:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 86K
描述
Trans Voltage Suppressor Diode, 1500W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMC, 2 PIN

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SMCJ58C-M3/9AT 数据手册

 浏览型号SMCJ58C-M3/9AT的Datasheet PDF文件第2页浏览型号SMCJ58C-M3/9AT的Datasheet PDF文件第3页浏览型号SMCJ58C-M3/9AT的Datasheet PDF文件第4页浏览型号SMCJ58C-M3/9AT的Datasheet PDF文件第5页 
SMCJ5.0A thru SMCJ188CA  
www.vishay.com  
Vishay General Semiconductor  
®
Surface Mount TRANSZORB Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
DO-214AB (SMC)  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
• Halogen-free according to IEC 61249-2-21 definition  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VWM  
PPPM  
5.0 V to 188 V  
1500 W  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
IFSM (uni-directional only)  
TJ max.  
200 A  
150 °C  
MECHANICAL DATA  
Case: DO-214AB (SMCJ)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3  
commercial grade  
- halogen-free, RoHS compliant, and  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional use C or CA suffix (e.g. SMCJ188CA).  
Electrical characteristics apply in both directions.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
1500  
UNIT  
W
(1)(2)  
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)  
Peak pulse current with a 10/1000 μs waveform  
PPPM  
(1)  
IPPM  
See next table  
200  
A
(2)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only  
Power dissipation on infinite heatsink, TA = 50 °C  
Operating junction and storage temperature range  
IFSM  
A
PD  
6.5  
W
TJ, TSTG  
- 55 to + 150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal  
(2)  
Revision: 20-Dec-11  
Document Number: 89331  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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