Datasheet > SMCJ13CHE3/9AT

SMCJ13CHE3/9AT

更新时间： 2024-11-01 15:51:47

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
6页	111K
描述
Trans Voltage Suppressor Diode, 13V V(RWM), Bidirectional,

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技术参数
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SMCJ13CHE3/9AT 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.82
击穿电压标称值：	16 V	最大钳位电压：	23.8 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	极性：	BIDIRECTIONAL
最大重复峰值反向电压：	13 V	子类别：	Transient Suppressors
表面贴装：	YES	Base Number Matches：	1

SMCJ13CHE3/9AT 数据手册

SMCJ5.0 thru SMCJ188CA

Vishay General Semiconductor

Surface Mount TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available inuni-directional and bi-directional

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum

DO-214AB (SMC)

peak of 260 °C

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

PRIMARY CHARACTERISTICS

TYPICAL APPLICATIONS

V_WM

5.0 V to 188 V

1500 W

6.5 W

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

P_PPM

P_D

_FSM(uni-directional only)

T_Jmax.

200 A

150 °C

MECHANICAL DATA

Case: DO-214AB (SMCJ)

Molding compound meets UL 94 V-0 flammability

rating

DEVICES FOR BI-DIRECTION APPLICATIONS

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

For bi-directional devices use C or CA suffix

(e.g. SMCJ188CA).

Electrical characteristics apply in both directions.

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

VALUE

1500

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ⁽¹⁾⁽²⁾

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Power dissipation on infinite heatsink, T_A= 50 °C

Operating junction and storage temperature range

See next table

200

I_FSM

P_D

6.5

T_J, T_STG

- 55 to + 150

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Mounted on 0.31 x 0.31" (8.0 x 8.0 mm) copper pads to each terminal

Document Number: 88394

Revision: 21-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5 6

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与SMCJ13CHE3/9AT相关器件

型号	品牌	获取价格	描述	数据表
SMCJ13C-HE3/9AT	VISHAY	获取价格	1500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
SMCJ13CHR	DIGITRON	获取价格	Trans Voltage Suppressor Diode
SMCJ13C-M3/9AT	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 13V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMCJ13C-T	MCC	获取价格	Transient Suppressor,
SMCJ13C-T3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 1500W, 13V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMCJ13E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMCJ13E3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMCJ13E3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMCJ13E3TR	MICROSEMI	获取价格	1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN
SMCJ13-GT3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 1500W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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