Datasheet > SMCJ13A-HR

SMCJ13A-HR

更新时间： 2024-11-02 22:59:19

品牌	Logo	应用领域
力特 - LITTELFUSE		电视
页数	文件大小	规格书
6页	743K
描述
TVS DIODE 13V 21.5V DO214AB

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中文翻译

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数据手册
替代型号

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SMCJ13A-HR 数据手册

TVS Diodes

Surface Mount – 1500W > SMCJ-HR Series

Pb e3

SMCJ-HR Series

RoHS

Description

The SMCJ-HR High Reliability series is designed

specifically to protect sensitive electronic equipment from

voltage transients induced by lightning and other transient

voltage events.

Uni-directional

Bi-directional

Agency Approvals

Features

• For surface mounted

applications in order to

optimize board space

• Low proﬁle package

• Built-in strain relief

• Typical I_Rless than 1µA

above 12V

• HighTemperature

soldering guaranteed:

260°C/40 seconds at

terminals

• Plastic package has

Underwriters laboratory

ﬂammability 94V-O

• Meet MSL level1, per

J-STD-020, LF maximun

peak of 260°C

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

• 2nd level interconnect is

Pb-free per IPC/JEDEC

J-STD-609A.01

• Recognized to UL 497B as

an Isolated Loop Circuit

Protector

Agency

Agency File Number

E230531

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

• V_BR@T_J= V_BR@25°C x (1+αT x

(T_J- 25))

(αT:Temperature Coefﬁcient)

Parameter

Symbol

P_PPM

Value

1500

6.5

Unit

• Glass passivated chip

junction

• 1500W peak pulse power

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Fast response time:

typically less than 1.0ps

from 0V to BV min

• Excellent clamping

capability

Peak Pulse Power Dissipation atT_A=25ºC by

10/1000µs waveform (Fig.1)(Note 1), (Note 2)

Power Dissipation on inﬁnite heat sink at

P_M(AV)

I_FSM

T_A=50^OC

Peak Forward Surge Current, 8.3ms Single Half

Sine Wave (Note 3)

Maximum Instantaneous Forward Voltage at

100A for Unidirectional

only (Note 4)

Operating Junction and StorageTemperature

Range

200

V_F

3.5/5.0

T_J, T_STG-65 to 150 °C

TypicalThermal Resistance Junction to Lead

R_uJL

R_uJA

°C/W

TypicalThermal Resistance Junction to

Ambient

• Low incremental surge

resistance

Notes:

1. Non-repetitive current pulse , per Fig. 3 and derated above T_A= 25^OC per Fig. 2.

2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only, duty

cycle=4 per minute maximum.

Functional Diagram

Applications

TVS devices are ideal for the protection of I/O Interfaces,

_CCbus and other vulnerable circuits used inTelecom,

Computer, Industrial and Consumer electronic applications.

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 03/10/20

12 3 4 5 6

中文翻译

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SMCJ13A-HR 替代型号

型号	品牌	替代类型	描述	数据表
SMCJ13A-HRAT7	LITTELFUSE	完全替代	TVS DIODE 13V 21.5V DO214AB
SMCJ13A-HRA	LITTELFUSE	完全替代	TVS DIODE 13V 21.5V DO214AB
SMCJ13A	LITTELFUSE	完全替代	Silicon Avalanche Diodes - 1500W Surface Mount Transient Voltage Supressors

与SMCJ13A-HR相关器件

型号	品牌	获取价格	描述	数据表
SMCJ13A-HRA	LITTELFUSE	获取价格	TVS DIODE 13V 21.5V DO214AB
SMCJ13A-HRAT7	LITTELFUSE	获取价格	TVS DIODE 13V 21.5V DO214AB
SMCJ13A-M3/57T	VISHAY	获取价格	TVS DIODE 13V 21.5V DO214AB
SMCJ13A-M3/9AT	VISHAY	获取价格	TVS DIODE 13V 21.5V DO214AB
SMCJ13AMA	FAIRCHILD	获取价格	Trans Voltage Suppressor Diode, 1500W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMCJ13AP	MCC	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC,
SMCJ13AP5	FAIRCHILD	获取价格	Trans Voltage Suppressor Diode, 1500W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMCJ13APBF	DIGITRON	获取价格	Trans Voltage Suppressor Diode
SMCJ13AQ	YANGJIE	获取价格	Surface Mount Transient Voltage Suppressor Diodes
SMCJ13AQ	MCC	获取价格	Tape :3K/Reel, 48K/Ctn;

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