SMCJ5.0A thru SMCJ188CA
www.vishay.com
Vishay General Semiconductor
®
Surface Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
DO-214AB (SMC)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
VBR uni-directional
6.40 V to 231 V
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
V
BR bi-directional
6.40 V to 231 V
5.0 V to 188 V
1500 W
VWM
PPPM
PD
6.5 W
MECHANICAL DATA
I
FSM (uni-directional only)
200 A
Case: DO-214AB (SMCJ)
Molding compound meets UL 94 V-0 flammability rating
TJ max.
150 °C
Base P/N-E3
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
- RoHS compliant, commercial grade
Polarity
Uni-directional, bi-directional
DO-214AB (SMCJ)
Package
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SMCJ188CA).
Electrical characteristics apply in both directions.
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
PPPM
VALUE
1500
UNIT
W
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2)
Peak pulse current with a 10/1000 μs waveform (1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Power dissipation on infinite heatsink, TA = 50 °C
IPPM
See next table
200
A
(2)
IFSM
A
PD
6.5
W
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.
Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal
(2)
Revision: 10-Dec-13
Document Number: 88394
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000