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SMC7G30US60 PDF预览

SMC7G30US60

更新时间: 2024-11-02 15:51:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网电动机控制开关晶体管
页数 文件大小 规格书
7页 265K
描述
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, 21PM-BA, 21 PIN

SMC7G30US60 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-P21
针数:21Reach Compliance Code:unknown
风险等级:5.82Is Samacsys:N
其他特性:HIGH SPEED SWITCHING最大集电极电流 (IC):30 A
集电极-发射极最大电压:600 V配置:COMPLEX
门极-发射极最大电压:20 VJESD-30 代码:R-PUFM-P21
元件数量:7端子数量:21
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):120 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:PIN/PEG
端子位置:UPPER晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):80 ns
标称接通时间 (ton):18 nsVCEsat-Max:2.7 V
Base Number Matches:1

SMC7G30US60 数据手册

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