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SMBZ5943B-E3/52 PDF预览

SMBZ5943B-E3/52

更新时间: 2024-11-12 17:26:15
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
5页 116K
描述
DIODE 56 V, 0.55 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN, Voltage Regulator Diode

SMBZ5943B-E3/52 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.37
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:86 Ω
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.55 W
认证状态:Not Qualified标称参考电压:56 V
子类别:Voltage Reference Diodes表面贴装:YES
技术:ZENER端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40最大电压容差:5%
工作测试电流:6.7 mABase Number Matches:1

SMBZ5943B-E3/52 数据手册

 浏览型号SMBZ5943B-E3/52的Datasheet PDF文件第2页浏览型号SMBZ5943B-E3/52的Datasheet PDF文件第3页浏览型号SMBZ5943B-E3/52的Datasheet PDF文件第4页浏览型号SMBZ5943B-E3/52的Datasheet PDF文件第5页 
SMBZ5919B thru SMBZ5945B  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount Power Voltage-Regulating Diodes  
FEATURES  
Low profile package  
• Ideal for automated placement  
• Low Zener impedance  
• Low regulation factor  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
DO-214AA (SMBJ)  
MECHANICAL DATA  
Case: DO-214AA (SMBJ)  
PRIMARY CHARACTERISTICS  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant and commercial grade  
VZ  
5.6 V to 85 V  
Ptot at TL = 75 °C  
Ptot at TA = 25 °C  
TJ max.  
3000 mW  
550 mW  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
150 °C  
E3 suffix meets JESD 201 class 1A whisker test  
VZ specification  
Pulse current  
Polarity: Color band denotes cathode end  
Int. construction  
Single  
TYPICAL APPLICATIONS  
For general purpose regulation and protection applications.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
Maximum steady state power dissipation at TL = 75 °C (fig. 1)  
Maximum steady state power dissipation at TA = 25 °C (fig. 1) (1)  
Maximum instantaneous forward voltage at 200 mA for all types (2)  
Ptot  
Ptot  
VF  
3000  
550  
1.5  
mW  
mW  
V
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 150  
°C  
Notes  
(1)  
Mounted on PCB with 5.0 mm x 5.0 mm copper pads attached to each terminal  
Pulse test: 300 μs pulse width, 1 % duty cycle  
(2)  
Revision: 25-May-12  
Document Number: 88485  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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