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SMBZ5930B-M3/5B PDF预览

SMBZ5930B-M3/5B

更新时间： 2024-12-01 22:54:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 91K
描述
DIODE ZENER 16V 500MW DO214AC

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SMBZ5930B-M3/5B 数据手册

 浏览型号SMBZ5930B-M3/5B的Datasheet PDF文件第2页浏览型号SMBZ5930B-M3/5B的Datasheet PDF文件第3页浏览型号SMBZ5930B-M3/5B的Datasheet PDF文件第4页浏览型号SMBZ5930B-M3/5B的Datasheet PDF文件第5页 
SMBG5.0A thru SMBG188CA  
www.vishay.com  
Vishay General Semiconductor  
®
Surface Mount TRANSZORB Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 600 W peak pulse power capability with a 10/1000 μs  
waveform, repetitive rate (duty cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
SMBG (DO-215AA)  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
VWM  
5.0 V to 188 V  
TYPICAL APPLCIATIONS  
V
BR (uni-directional)  
6.4 V to 231 V  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
V
BR (bi-directional)  
PPPM  
6.4 V to 231 V  
600 W  
I
FSM (uni-directional only)  
100 A  
TJ max.  
150 °C  
MECHANICAL DATA  
Polarity  
Uni-directional, bi-directional  
SMBG (DO-215AA)  
Case: SMBG (DO-215AA)  
Molding compound meets UL 94 V-0 flammability rating  
Package  
Base P/N-M3  
commercial grade  
- halogen-free, RoHS-compliant, and  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional devices use CA suffix (e.g. SMBG10CA).  
Electrical characteristics apply in both directions.  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
M3 suffix meets JESD 201 class 2 whisker test  
Polarity: for uni-directional types the band denotes cathode  
end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
600  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) (1)(2)  
Peak pulse current with a 10/1000 μs waveform (1)  
Peak forward surge current 8.3 ms single half sine-wave (2)  
Operating junction and storage temperature range  
IPPM  
See next table  
60  
A
IFSM  
A
TJ, TSTG  
-65 to +175  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 16-Jan-18  
Document Number: 89421  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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SMBZ5930B-M3/5B 替代型号

型号 品牌 替代类型 描述 数据表
SMBZ5930B-M3/52 VISHAY

完全替代

 DIODE ZENER 16V 500MW DO214AC
SMBZ5930B-E3/5B VISHAY

类似代替

 DIODE 16 V, 0.55 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA, ROHS COMPLI
SMBZ5930B-E3/52 VISHAY

类似代替

 DIODE 16 V, 0.55 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA, ROHS COMPLI

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