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SMBZ5935B-E3/52 PDF预览

SMBZ5935B-E3/52

更新时间: 2024-11-12 06:12:27
品牌 Logo 应用领域
威世 - VISHAY 稳压二极管测试光电二极管
页数 文件大小 规格书
5页 110K
描述
Surface Mount Power Voltage-Regulating Diodes

SMBZ5935B-E3/52 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.58
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:23 ΩJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:0.55 W认证状态:Not Qualified
标称参考电压:27 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
最大电压容差:4.99%工作测试电流:13.9 mA
Base Number Matches:1

SMBZ5935B-E3/52 数据手册

 浏览型号SMBZ5935B-E3/52的Datasheet PDF文件第2页浏览型号SMBZ5935B-E3/52的Datasheet PDF文件第3页浏览型号SMBZ5935B-E3/52的Datasheet PDF文件第4页浏览型号SMBZ5935B-E3/52的Datasheet PDF文件第5页 
New Product  
SMBZ5919B thru SMBZ5945B  
Vishay General Semiconductor  
Surface Mount Power Voltage-Regulating Diodes  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Low Zener impedance  
• Low regulation factor  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
DO-214AA (SMBJ)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For general purpose regulation and protection  
applications.  
PRIMARY CHARACTERISTICS  
VZ  
5.6 V to 68 V  
MECHANICAL DATA  
Case: DO-214AA (SMBJ)  
PD  
3.0 W at TL = 75 °C  
550 mW at TA = 25 °C  
150 °C  
PD  
Molding compound meets UL 94 V-0 flammability  
rating  
TJ max.  
Base P/N-E3 - RoHS compliant, commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
PARAMETER  
SYMBOL  
VALUE  
3.0  
UNIT  
W
Maximum steady state power dissipation at TL = 75 °C (Fig. 1)  
Maximum steady state power dissipation at TA = 25 °C (Fig. 1) (1)  
PD  
PD  
550  
mW  
V
Maximum instantaneous forward voltage at 200 mA for all types (2)  
Operating junction and storage temperature range  
VF  
1.5  
TJ, TSTG  
- 55 to + 150  
°C  
Notes:  
(1) Mounted on minimum recommended pad layout  
(2) Pulse test: 300 µs pulse width, 1 % duty cycle  
Document Number: 88485  
Revision: 20-Oct-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

SMBZ5935B-E3/52 替代型号

型号 品牌 替代类型 描述 数据表
SMBZ5935B-E3/5B VISHAY

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