Datasheet > SMBYW02-50

SMBYW02-50

更新时间： 2024-11-03 02:59:23

品牌	Logo	应用领域
圣诺 - SENO		功效光电二极管
页数	文件大小	规格书
2页	110K
描述
2.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

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中文翻译

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数据手册

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SMBYW02-50 数据手册

Zibo Seno Electronic Engineering Co., Ltd.

SMBYW02-50 – SMBYW02-600

2.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

Features

Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop, High Efficiency

Surge Overload Rating to 50A Peak

Low Power Loss

Super-Fast Recovery Time

Plastic Case Material has UL Flammability

Classification Rating 94V-O

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀE

SMB/DO-214AA

Mechanical Data

Dim

Min

3.30

4.06

1.96

0.15

5.00

2.00

0.10

0.76

Max

3.94

4.57

2.21

0.31

5.59

2.62

0.20

1.52

Case: SMB/DO-214AA, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.093 grams (approx.)

Lead Free: For RoHS / Lead Free Version

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

SMBYW02 SMBYW02 SMBYW02 SMBYW02 SMBYW02 SMBYW02 SMBYW02

Symbol

Unit

Characteristic

-50

-100

-150

-200

-300

-400

-600

Marking Code

A20

A40

A60

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RW^M

V^R

100

150

105

200

300

210

400

280

600

420

RMS Reverse Voltage

V^R(RMS)

I^O

140

2.0

Average Rectified Output Current

@T_L= 120°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 2.0A

V^FM

I^RM

0.95

1.30

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

2.0

500

µA

Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

t^rr

C^j

R^ꢀ^JL

T^j,T^STG

°C/W

°C

Operating and Storage Temperature Range

-55 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A. See figure 5.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm²land area.

www.senocn.com

SMBYW02-50 – SMBYW02-600

1 of 2

中文翻译

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与SMBYW02-50相关器件

型号	品牌	获取价格	描述	数据表
SMBYW02-600	SENO	获取价格	2.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
SMBYW04	ETC	获取价格	HIGH EFFICIENCY FAST RECOVERY DIODES
SMBYW04-100	STMICROELECTRONICS	获取价格	4A, 100V, SILICON, RECTIFIER DIODE
SMBYW04-100	SENO	获取价格	4.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
SMBYW04-150	STMICROELECTRONICS	获取价格	4A, 150V, SILICON, RECTIFIER DIODE
SMBYW04-150	SENO	获取价格	4.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
SMBYW04-200	STMICROELECTRONICS	获取价格	HIGH EFFICIENCY FAST RECOVERY DIODE
SMBYW04-200	SENO	获取价格	4.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
SMBYW04-300	SENO	获取价格	4.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
SMBYW04-400	SENO	获取价格	4.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

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