Datasheet > SMBYW02-100

SMBYW02-100

更新时间： 2024-11-26 02:50:15

品牌	Logo	应用领域
圣诺 - SENO		/
页数	文件大小	规格书
2页	110K
描述
2.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SMBYW02-100 数据手册

Zibo Seno Electronic Engineering Co., Ltd.

SMBYW02-50 – SMBYW02-600

2.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

Features

Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop, High Efficiency

Surge Overload Rating to 50A Peak

Low Power Loss

Super-Fast Recovery Time

Plastic Case Material has UL Flammability

Classification Rating 94V-O

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀE

SMB/DO-214AA

Mechanical Data

Dim

Min

3.30

4.06

1.96

0.15

5.00

2.00

0.10

0.76

Max

3.94

4.57

2.21

0.31

5.59

2.62

0.20

1.52

Case: SMB/DO-214AA, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.093 grams (approx.)

Lead Free: For RoHS / Lead Free Version

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

SMBYW02 SMBYW02 SMBYW02 SMBYW02 SMBYW02 SMBYW02 SMBYW02

Symbol

Unit

Characteristic

-50

-100

-150

-200

-300

-400

-600

Marking Code

A20

A40

A60

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RW^M

V^R

100

150

105

200

300

210

400

280

600

420

RMS Reverse Voltage

V^R(RMS)

I^O

140

2.0

Average Rectified Output Current

@T_L= 120°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 2.0A

V^FM

I^RM

0.95

1.30

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

2.0

500

µA

Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

t^rr

C^j

R^ꢀ^JL

T^j,T^STG

°C/W

°C

Operating and Storage Temperature Range

-55 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A. See figure 5.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm²land area.

www.senocn.com

SMBYW02-50 – SMBYW02-600

1 of 2

中文翻译

下载PDF

与SMBYW02-100相关器件

型号	品牌	获取价格	描述	数据表
SMBYW02-150	STMICROELECTRONICS	获取价格	2A, 150V, SILICON, RECTIFIER DIODE
SMBYW02-150	SENO	获取价格	2.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
SMBYW02-200	STMICROELECTRONICS	获取价格	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
SMBYW02-200	SENO	获取价格	2.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
SMBYW02-300	SENO	获取价格	2.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
SMBYW02-400	SENO	获取价格	2.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
SMBYW02-50	SENO	获取价格	2.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
SMBYW02-50	STMICROELECTRONICS	获取价格	2A, 50V, SILICON, RECTIFIER DIODE
SMBYW02-600	SENO	获取价格	2.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
SMBYW04	ETC	获取价格	HIGH EFFICIENCY FAST RECOVERY DIODES

与SMBYW02-100相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

40
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

32
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

60
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

56

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBYW02-100

SMBYW02-100 数据手册

与SMBYW02-100相关器件

与SMBYW02-100相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBYW02-100

SMBYW02-100 数据手册

与SMBYW02-100相关器件

与SMBYW02-100相关文章

您还可以找

您在本页遇到什么问题？