是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | DO-214AA |
包装说明: | R-PDSO-C2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.18 |
Is Samacsys: | N | 最大击穿电压: | 15.8 V |
最小击穿电压: | 14.3 V | 击穿电压标称值: | 15 V |
最大钳位电压: | 21.2 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95代码: | DO-214AA | JESD-30 代码: | R-PDSO-C2 |
JESD-609代码: | e0 | 湿度敏感等级: | 1 |
最大非重复峰值反向功率耗散: | 600 W | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 235 | 极性: | UNIDIRECTIONAL |
最大功率耗散: | 1.38 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 12.8 V | 子类别: | Transient Suppressors |
表面贴装: | YES | 技术: | AVALANCHE |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | C BEND |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 20 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMBJP6KE15AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 12.8V V(RWM), Unidirectional, 1 Element, Silicon, DO |
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SMBJP6KE15AE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 12.8V V(RWM), Unidirectional, 1 Element, Silicon, DO |
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SMBJP6KE15AHE3 | MCC |
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Tape&Reel: 3Kpcs/Reel; |
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SMBJP6KE15AHE3-TP-HF | MCC |
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Trans Voltage Suppressor Diode, |
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SMBJP6KE15AP | MCC |
获取价格 |
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, SMBJ, 2 PIN, Transient Suppress |
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SMBJP6KE15AQ | MCC |
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Tape :3K/Reel, 48K/Ctn; |
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SMBJP6KE15A-T | MCC |
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Transient Suppressor, |
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SMBJP6KE15A-TP | MCC |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 12.8V V(RWM), Unidirectional, 1 Element, Silicon, DO |
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SMBJP6KE15A-TP-HF | MCC |
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暂无描述 |
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SMBJP6KE15ATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 12.8V V(RWM), Unidirectional, 1 Element, Silicon, DO |
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