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SMBJ75CHE3/5B PDF预览

SMBJ75CHE3/5B

更新时间： 2024-11-04 13:52:07
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 114K
描述
Trans Voltage Suppressor Diode, 75V V(RWM), Bidirectional,

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中文翻译

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SMBJ75CHE3/5B 技术参数

是否Rohs认证：符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.3
Is Samacsys：N击穿电压标称值：92.65 V
最大钳位电压：134 V二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
极性：BIDIRECTIONAL最大重复峰值反向电压：75 V
子类别：Transient Suppressors表面贴装：YES
Base Number Matches：1

SMBJ75CHE3/5B 数据手册

 浏览型号SMBJ75CHE3/5B的Datasheet PDF文件第2页浏览型号SMBJ75CHE3/5B的Datasheet PDF文件第3页浏览型号SMBJ75CHE3/5B的Datasheet PDF文件第4页浏览型号SMBJ75CHE3/5B的Datasheet PDF文件第5页 
SMBJ5.0A thru SMBJ188A  
Vishay General Semiconductor  
www.vishay.com  
®
Surface Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
Available  
• 600 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty  
cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
SMB (DO-214AA)  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VBR (bi-directional)  
6.4 V to 231 V  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
V
BR (uni-directional)  
6.4 V to 231 V  
5.0 V to 188 V  
600 W  
VWM  
PPPM  
IFSM (uni-directional only)  
TJ max.  
100 A  
MECHANICAL DATA  
150 °C  
Case: SMB (DO-214AA)  
Polarity  
Uni-directional, bi-directional  
SMB (DO-214AA)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
Package  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B, ...)  
DEVICES FOR BI-DIRECTION APPLICATIONS  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
For bi-directional devices use CA suffix (e.g. SMBJ10CA).  
Electrical characteristics apply in both directions.  
Polarity: for uni-directional types the band denotes cathode  
end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
600  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1)  
IPPM  
See next table  
100  
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Operating junction and storage temperature range  
IFSM  
A
TJ, TSTG  
-55 to +150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 24-Jan-2019  
Document Number: 88392  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345

中文翻译

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SMBJ75CHE3/5B 替代型号

型号 品牌 替代类型 描述 数据表
SMBJ75CAHE3/5B VISHAY

类似代替

 TVS DIODE 75V 121V DO214AA

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 		Trans Voltage Suppressor Diode, 600W, 75V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
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 		Trans Voltage Suppressor Diode, 600W, 75V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

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