Datasheet > SMBJ7.5D

SMBJ7.5D

更新时间： 2023-02-26 13:40:56

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	84K
描述
Transient Suppressor,

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中文翻译

获取价格

技术参数
数据手册

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SMBJ7.5D 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.8	Base Number Matches：	1

SMBJ7.5D 数据手册

SMBJ5.0D thru SMBJ188D

Vishay General Semiconductor

www.vishay.com

Surface Mount TRANSZORB

Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

•

3.5 %, very tight V_BRtolerance

• Available in uni-directional

• 600 W peak pulse power capability with a 10/1000 μs

waveform, repetitive rate (duty cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

DO-214AA (SMBJ-Bend)

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

PRIMARY CHARACTERISTICS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFETs, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

V_BR(uni-directional)

6.5 V to 228 V

V_WM

5.0 V to 188 V

600 W

P_PPM

P_Dat T_M= 50 °C

5.0 W

MECHANICAL DATA

_Dat T_A= 25 °C

T_Jmax.

1.0 W

Case: DO-214AA (SMBJ)

Molding compound meets UL 94 V-0 flammability rating

150 °C

Base P/N-M3

industrial grade

- halogen-free, RoHS-compliant, and

Polarity

Uni-directional

DO-214AA (SMBJ)

Package

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test

Polarity: for uni-directional types the band denotes cathode

end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

(1)

Peak pulse power dissipation

Peak pulse current

with a 10/1000 μs waveform

P_PPM

600

(1)

with a 10/1000 μs waveform

T_M= 50 °C

I_PPM

See next table

5.0

(2)

P_D

Power dissipation

(3)

T_A= 25 °C

P_D

1.0

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

°C

Notes

(1)

(2)

(3)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Power dissipation mounted on infinite heatsink

Power dissipation mounted on minimum recommended pad layout

Revision: 08-May-15

Document Number: 87606

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

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与SMBJ7.5D相关器件

型号	品牌	获取价格	描述	数据表
SMBJ7.5D / CD	SWST	获取价格	瞬态电压抑制管
SMBJ7.5-E3/52	VISHAY	获取价格	TVS DIODE 7.5V 14.3V DO214AA
SMBJ7.5-E3/5B	VISHAY	获取价格	TVS DIODE 7.5V 14.3V DO214AA
SMBJ7.5E3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 7.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ7.5-GT3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 600W, 7.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ7.5HE3/52	VISHAY	获取价格	TVS DIODE 7.5V 14.3V DO214AA
SMBJ7.5HE3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 7.5V V(RWM), Unidirectional,
SMBJ7.5-HE3/5B	VISHAY	获取价格	600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
SMBJ7.5-M3/52	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 7.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ7.5-M3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 7.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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