5秒后页面跳转
SMBJ6.0C-TP-HF PDF预览

SMBJ6.0C-TP-HF

更新时间: 2024-01-23 23:51:23
品牌 Logo 应用领域
美微科 - MCC 局域网光电二极管
页数 文件大小 规格书
9页 339K
描述
Trans Voltage Suppressor Diode, 600W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN

SMBJ6.0C-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMB, 2 PINReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.1其他特性:UL RECOGNIZED
最大击穿电压:8.15 V最小击穿电压:6.67 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2湿度敏感等级:1
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:BIDIRECTIONAL
最大功率耗散:5 W最大重复峰值反向电压:6 V
表面贴装:YES技术:AVALANCHE
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

SMBJ6.0C-TP-HF 数据手册

 浏览型号SMBJ6.0C-TP-HF的Datasheet PDF文件第2页浏览型号SMBJ6.0C-TP-HF的Datasheet PDF文件第3页浏览型号SMBJ6.0C-TP-HF的Datasheet PDF文件第4页浏览型号SMBJ6.0C-TP-HF的Datasheet PDF文件第5页浏览型号SMBJ6.0C-TP-HF的Datasheet PDF文件第6页浏览型号SMBJ6.0C-TP-HF的Datasheet PDF文件第7页 
SMBJ5.0  
THRU  
SMBJ440CA  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
Transient  
Voltage Suppressor  
5.0 to 440 Volts  
600 Watt  
For surface mount applicationsin order to optimize board space  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
Fast response time: typical less than 1.0ps from 0 volts to  
VBR minimum  
Low inductance  
UL Recognized File # E331408  
DO-214AA  
(SMB) (LEAD FRAME)  
· Halogen free available upon request by adding suffix "-HF"  
Mechanical Data  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Terminals: solderable per MIL-STD-750, Method 2026  
G
Polarity: Color band denotes pos itive end (cathode)  
except Bidirectional  
H
Maximum soldering temperature: 260oC for 10 seconds  
D
Maximum Ratings @ 25oC Unless Otherwise Specified  
A
C
Peak Pulse Current on  
10/1000us waveform  
IPP  
See Table 1 Note: 2  
E
Peak Pulse Power  
PPP  
600W  
Note: 2,  
3
B
Dissipation  
F
-55oC to  
Operation And Storage TJ, TSTG  
Temperature Range  
+175oC  
DIMENSIONS  
Thermal Resistance  
RthJC  
RthJL  
25oC/W  
INCHES  
MIN  
MM  
MIN  
20oC/W  
DIM  
A
MAX  
.096  
.083  
.008  
.012  
.050  
.220  
.185  
.155  
MAX  
2.44  
2.11  
0.203  
0.305  
1.27  
5.59  
4.70  
3.94  
NOTE  
.083  
.075  
.002  
.006-  
.030  
.200  
.160  
.130  
2.13  
1.91  
0.051  
0.152  
0.76  
5.08  
4.06  
3.30  
B
C
D
E
F
G
H
SUGGESTED SOLDER  
PAD LAYOUT  
NOTES:  
1. High Temperature Solder Exemptions Applied, see EU Directive Annex 7.  
0.106"  
2. Non-repetitive current pulse, per Fig.3 and derated above  
TA=25oC per Fig.2.  
3. Mounted on 5.0mm2 copper pads to each terminal.  
0.082”  
4. Peak pulse current waveform is 10/1000us, with maximum duty  
Cycle of 0.01%.  
5. Unidirectional and bidirectional available,for bidirectional devices  
add 'C' suffix to the pn#, i.e.SMBJ5.0CA  
6. For bi-directional type having Vrwm of 10 Volts and less, the IR  
limit is double.  
0.050”  
www.mccsemi.com  
1 of 9  
Revision: E  
2013/07/18  

与SMBJ6.0C-TP-HF相关器件

型号 品牌 获取价格 描述 数据表
SMBJ6.0CTR MICROSEMI

获取价格

600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC PACKAGE-2
SMBJ6.0CTRE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 6V V(RWM), Bidirectional,
SMBJ6.0D / CD SWST

获取价格

瞬态电压抑制管
SMBJ6.0-E3/52 VISHAY

获取价格

TVS DIODE 6V 11.4V DO214AA
SMBJ6.0-E3/55 VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, 6V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ6.0-E3/5B VISHAY

获取价格

TVS DIODE 6V 11.4V DO214AA
SMBJ6.0E3/TR13 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 6V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ6.0E3TR MICROSEMI

获取价格

600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
SMBJ6.0HE3/52 VISHAY

获取价格

TVS DIODE 6V 11.4V DO214AA
SMBJ6.0HE3/5B VISHAY

获取价格

TVS DIODE 6V 11.4V DO214AA