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SMBJ6.0-W PDF预览

SMBJ6.0-W

更新时间: 2024-11-13 21:15:23
品牌 Logo 应用领域
RECTRON 局域网光电二极管
页数 文件大小 规格书
5页 35K
描述
Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2

SMBJ6.0-W 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DO-214AA包装说明:PLASTIC PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.63最大击穿电压:8.15 V
最小击穿电压:6.67 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3最大非重复峰值反向功率耗散:600 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):265
极性:UNIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SMBJ6.0-W 数据手册

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TVS  
RECTRON  
TECHNICAL SPECIFICATION  
TFMBJ  
SERIES  
SEMICONDUCTOR  
SURFACE MOUNT GPP  
GPP TRANSIENT VOLTAGE SUPPRESSOR  
600 WATT PEAK POWER 5.0 WATTS STEADY STATE  
FEATURES  
* Plastic package has underwriters laboratory  
* Glass passivated chip construction  
* 600 watt surage capability at 1ms  
* Excellent clamping capability  
* Low zener impedance  
DO-214AA  
* Fast response time  
(
)
0.083 2.11  
(
)
)
0.155 3.94  
(
)
0.077 1.96  
(
0.130 3.30  
(
)
0.180 4.57  
(
)
0.160 4.06  
(
)
0.012 0.305  
(
)
0.006 0.152  
Ratings at 25 oC ambient temperature unless otherwise specified.  
(
)
)
)
0.096 2.44  
(
0.084 2.13  
(
0.060 1.52  
(
)
)
0.008 0.203  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
(
)
0.030 0.76  
(
0.004 0.102  
(
)
0.220 5.59  
(
)
0.205 5.21  
Dimensions in inches and (millimeters)  
DEVICES FOR BIPOLAR APPLICATIONS  
For Bidirectional use C or CA suffix for types TFMBJ5.0 thru TFMBJ170  
Electrical characteristics apply in both direction  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
SYMBOL  
VALUE  
UNITS  
RATINGS  
P
PPM  
Minimum 600  
Watts  
Amps  
Watts  
Peak Power Dissipation with a 10/1000uS (Note 1,2, Fig.1)  
Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.3 )  
I
PPM  
SEE TABLE 1  
5.0  
Steady State Power Dissipation at  
TL  
= 75oC (Note 2)  
PM(AV)  
Peak Forward Surge Current 8.3mS single half sine-wave  
superimposed on rated load (JEDEC method) (Note 2,3)  
unidirectional only  
I
FSM  
100  
Amps  
Maximum Instantaneous Forward Voltage at 50A for unidirectional  
only (Note 3,4)  
V
F
SEE NOTE 4  
-55 to + 150  
Volts  
0 C  
T
J
, TSTG  
Operating and Storage Temperature Range  
= 25oC per Fig.2.  
2002-12  
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T  
A
2. Mounted on 0.2 X 0.2”( 5.0 X 5.0mm ) copper pad to each terminal.  
3. Lead temperature at TL = 25oC  
4. Measured on 8.3mS single half sine-wave duty cycle = 4 pules per minute maximum.  
5. VF = 3.5V on TFMBJ-5.0 thru TFMBJ-90 devices and VF = 5.0V on TFMBJ-100 thru TFMBJ-170 devices.  

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