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SMBJ58A PDF预览

SMBJ58A

更新时间: 2024-02-18 23:46:05
品牌 Logo 应用领域
SSC 二极管光电二极管局域网
页数 文件大小 规格书
4页 755K
描述
Transient Voltage Suppressors

SMBJ58A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PDSO-C2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.29其他特性:UL RECOGNIZED
最大击穿电压:78.7 V最小击穿电压:64.4 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2湿度敏感等级:1
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:5 W最大重复峰值反向电压:58 V
表面贴装:YES技术:AVALANCHE
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:10

SMBJ58A 数据手册

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SMBJ Series  
Transient Voltage Suppressors  
PRODUCT SUMMARY  
Stand-off Voltage ratings from 5.0V to 440V  
Peak pulse power 600W in SMB surface-mount package  
FEATURES  
Plastic package has Underwriters Laboratory Flammability  
Classification 94V-0  
Low profile package with built-in strain relief for surface-mount  
Glass passivated junction  
Low incremental surge resistance, excellent clamping capability  
Peak pulse power capability of 600W with a 10/1000us waveform,  
repetition rate (duty cycle): 0.01%  
Very fast response time  
High temperature soldering guaranteed:  
260°C for 10 seconds at terminals  
MECHANICAL DATA  
Case: JEDEC DO-214AA (SMB) molded plastic over passivated chip  
Terminals: Matte-Sn plated, solderable per MIL-STD-750,  
Method 2026  
Polarity: For uni-directional types the band denotes the cathode, which  
is positive with respect to the anode under normal TVS operation.  
Mounting position: Any  
Weight: 0.003oz., 0.093g  
Pb-free; RoHS-compliant  
Devices for Bidirectional Applications  
For bi-directional devices, use suffix CA (e.g. SMBJ10CA). Electrical characteristics apply in both directions.  
MAXIMUM RATINGS  
Rating at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
Value  
Unit  
Peak pulse power dissipation with  
PPPM  
IPPM  
Minimum 600  
See Next Table  
100  
W
A
a 10/1000us waveform (1,2) (see Fig. 1)  
Peak pulse current with a 10/1000us waveform (1)  
Peak forward surge current, 8.3ms single half sine-wave  
uni-directional only (2)  
IFSM  
A
Typical thermal resistance, junction to ambient (3)  
RθJA  
RθJL  
100  
20  
°C/W  
°C/W  
°C  
Typical thermal resistance, junction to lead  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
Notes: 1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2.  
2. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal  
3. Mounted on minimum recommended pad layout  
9/21/2006 Rev.4.01  
www.SiliconStandard.com  
1 of 4  

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