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SMBJ54A-E3/52 PDF预览

SMBJ54A-E3/52

更新时间： 2024-11-13 22:14:59
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管电视
页数 文件大小 规格书
6页 121K
描述
TVS DIODE 54V 87.1V DO214AA

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中文翻译

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SMBJ54A-E3/52 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-214AA
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：1.26
Samacsys Description：Vishay SMBJ54A-E3/52, Uni-Directional TVS Diode, 600W, 2-Pin DO-214AA其他特性：EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
最大击穿电压：66.3 V最小击穿电压：60 V
击穿电压标称值：63.15 V最大钳位电压：87.1 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：600 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL认证状态：Not Qualified
最大重复峰值反向电压：54 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：30
Base Number Matches：1

SMBJ54A-E3/52 数据手册

 浏览型号SMBJ54A-E3/52的Datasheet PDF文件第2页浏览型号SMBJ54A-E3/52的Datasheet PDF文件第3页浏览型号SMBJ54A-E3/52的Datasheet PDF文件第4页浏览型号SMBJ54A-E3/52的Datasheet PDF文件第5页浏览型号SMBJ54A-E3/52的Datasheet PDF文件第6页 
SMBJ5.0A thru SMBJ188A  
Vishay General Semiconductor  
www.vishay.com  
®
Surface-Mount TRANSZORB Transient Voltage Suppressors  
FEATURES  
Available  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in unidirectional and bidirectional  
• 600 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate  
(duty cycle): 0.01 %  
Available  
SMB (DO-214AA)  
• Excellent clamping capability  
• Very fast response time  
Cathode  
Anode  
• Low incremental surge resistance  
(unidirectional)  
(bidirectional)  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
LINKS TO ADDITIONAL RESOURCES  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
3
D
3
D
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3D Models  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: SMB (DO-214AA)  
VBR (bidirectional)  
6.4 V to 231 V  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
V
BR (unidirectional)  
6.4 V to 231 V  
5.0 V to 188 V  
600 W  
VWM  
PPPM  
PD  
5.0 W  
I
FSM (unidirectional only)  
100 A  
TJ max.  
150 °C  
(“_X” denotes revision code e.g. A, B, ...)  
Polarity  
Unidirectional, bidirectional  
SMB (DO-214AA)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
Package  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
DEVICES FOR BIDIRECTION APPLICATIONS  
For bidirectional devices use CA suffix (e.g. SMBJ10CA).  
Electrical characteristics apply in both directions.  
Polarity: for unidirectional types the band denotes cathode  
end, no marking on bidirectional types  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1)  
SYMBOL  
PPPM  
VALUE  
600  
UNIT  
W
IPPM  
See next table  
5.0  
A
Power dissipation on infinite heatsink at TA = 50 °C  
Peak forward surge current 8.3 ms single half sine-wave unidirectional only (2)  
Operating junction and storage temperature range  
PD  
W
IFSM  
100  
A
TJ, TSTG  
-55 to +150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 30-Jun-2021  
Document Number: 88392  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123456

中文翻译

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SMBJ54A-E3/52 替代型号

型号 品牌 替代类型 描述 数据表
SMBJ54A-E3/5B VISHAY

类似代替

 TVS DIODE 54V 87.1V DO214AA
SMBJ54A-M3/5B VISHAY

类似代替

 TVS DIODE 54V 87.1V DO214AA
SMBJ54AHE3/5B VISHAY

类似代替

 TVS DIODE 54V 87.1V DO214AA

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SMBJ54A-E3/5B VISHAY

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 		TVS DIODE 54V 87.1V DO214AA
SMBJ54AE3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 54V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBJ54AE3/TR13 MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 54V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBJ54A-G SENSITRON

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 		Trans Voltage Suppressor Diode, 600W, 54V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBJ54A-H YINT

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 		Automotive and High Reliability TVS Diodes
SMBJ54AHE3/52 VISHAY

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 		TVS DIODE 54V 87.1V DO214AA
SMBJ54AHE3/5B VISHAY

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 		TVS DIODE 54V 87.1V DO214AA
SMBJ54A-HR LITTELFUSE

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 		SMBJ HR系列高可靠性瞬态抑制二极管是经升级筛选的Littelfuse即用型高可靠性瞬
SMBJ54A-HRA LITTELFUSE

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 		TVS DIODE 54V 87.1V DO214AA
SMBJ54A-M3/52 VISHAY

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 		TVS DIODE 54V 87.1V DO214AA

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