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SMBJ5362B-TPX01 PDF预览

SMBJ5362B-TPX01

更新时间: 2024-11-22 15:51:47
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
4页 291K
描述
Zener Diode,

SMBJ5362B-TPX01 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.68
Base Number Matches:1

SMBJ5362B-TPX01 数据手册

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SMBJ5338B-TPX01  
THRU  
SMBJ5369B-TPX01  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
5 Watt  
xꢀ Low Profile Package for Surface Mountiong(Flat Handling  
Surface for Accurate Placement)  
Surface Mount Silicon  
Zener Diode  
xꢀ Zener Voltage 5.1V to 51V  
xꢀ High Surge Current Capability  
xꢀ For Available Tolerances-see Note 1  
5.1 to 51 Volts  
xꢀ Available on Tape and Reel (see E1A std RS-481)  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
DO-214AA  
(SMB) (Lead Frame)  
·
Glass Passivated Junction  
H
Mechanical Data  
xꢀ Standard JEDEC Outlines as Shown  
xꢀ Marking: See page 2  
J
xꢀ Maximum Temperature for Soldering: 260к for 10 Seconds  
·
Epoxy meets UL 94 V-0 flammability rating  
·
Moisture Sensitivity Level 1  
Electrical Characteristics @ 25qC Unless Otherwise Specified  
A
C
Forward Voltage at  
VF  
1.2Volts  
1.0A Current  
E
D
B
Steady State Power  
Dissipation  
P(AV)  
5Watts See Note 2  
Operating and Storage  
Temperatures  
Thermal Resistance  
G
-55к to +150к  
25к/W  
TJ, TSTG  
RșJL  
DIMENSIONS  
INCHES  
MIN  
.075  
.077  
.002  
-----  
.030  
.200  
.160  
.130  
MM  
DIM  
A
B
C
D
E
G
H
MAX  
.095  
.083  
.008  
.02  
.060  
.220  
.187  
.155  
MIN  
1.91  
1.96  
.05  
-----  
.76  
5.08  
4.06  
3.30  
MAX  
2.41  
2.10  
.20  
NOTE  
1. High Temperature Solder Exemptions Applied, see EU Directive Annex 7.  
Note:  
2. Lead temperature at 25к = TL at mounting plane. Derate linearly  
above 25к to zero power at 150 к  
.51  
1.52  
5.59  
4.75  
3.94  
J
SUGGESTED SOLDER  
PAD LAYOUT  
0.090"  
0.085”  
0.070”  
www.mccsemi.com  
1 of 4  
Revision: A  
2011/01/01  

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