Datasheet > SMBJ26AE3

SMBJ26AE3

更新时间： 2023-02-26 15:53:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	176K
描述
Trans Voltage Suppressor Diode, 600W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

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数据手册

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SMBJ26AE3 数据手册

SMBJ5.0 thru SMBJ170A, CA, e3

and SMBG5.0 thru SMBG170A, CA, e3

SURFACE MOUNT 600 Watt

Transient Voltage Suppressor

S C O T T S D A L E D I V I S I O N

GRAPHS

T_C= 25^oC

5.0

3.0

2.0

1.0

0.5

0.3

0.2

0.1

0.1 0.2

0.5 1.0 2.0

5.0 10

50 100 200

1000

10,000

Test waveform parameters: tr=10 μs, tw=1000 μs

FIGURE 2

tw – Pulse Width - μs

FIGURE 1

Peak Pulse Power vs. Pulse Time

Pulse Waveform for

Exponential Surge

PAD LAYOUT

SMBJ

INCHES

.260

.085

6.60

2.16

2.79

.110

SMBG

INCHES

0.320

0.085

8.13

2.16

2.79

T_LLead Temperature ^oC

V_(BR)- Breakdown Voltage – Volts

FIGURE 4

Typical Capacitance vs Breakdown Voltage

FIGURE 3 - Derating Curve

0.110

PACKAGE DIMENSIONS

MIN

MAX

.077 .160

.083 .180

.130 .205

.155 .220

.077

.104

.235

.255

.015

.030

.060

DIMENSIONS IN MILLIMETERS

MIN

MAX

1.96 4.06

2.10 4.57

3.30 5.21

3.94 5.59

1.95

2.65

5.97

6.48

.381

.762

.760

1.520

SA3-37, REV J, 5-24-2009

Microsemi

Page 4

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1 2 34

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与SMBJ26AE3相关器件

型号	品牌	描述	获取价格	数据表
SMBJ26A-E3	VISHAY	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient	获取价格
SMBJ26A-E3/51	VISHAY	TVS DIODE 26V 42.1V DO214AA	获取价格
SMBJ26A-E3/5B	VISHAY	TVS DIODE 26V 42.1V DO214AA	获取价格
SMBJ26AE3/TR	MICROSEMI	Trans Voltage Suppressor Diode, 600W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-2	获取价格
SMBJ26AE3TR	MICROSEMI	600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2	获取价格
SMBJ26A-G	SENSITRON	Trans Voltage Suppressor Diode, 600W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-2	获取价格