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SMBJ26A-E3 PDF预览

SMBJ26A-E3

更新时间: 2023-01-02 20:55:02
品牌 Logo 应用领域
威世 - VISHAY 电视
页数 文件大小 规格书
5页 89K
描述
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient Suppressor

SMBJ26A-E3 数据手册

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SMBJ5.0A thru SMBJ188CA  
www.vishay.com  
Vishay General Semiconductor  
®
Surface Mount TRANSZORB Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 600 W peak pulse power capability with a 10/1000 μs  
waveform, repetitive rate (duty cycle): 0.01 %  
• Excellent clamping capability  
DO-214AA (SMB J-Bend)  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
PRIMARY CHARACTERISTICS  
VWM  
5.0 V to 188 V  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PPPM  
600 W  
100 A  
I
FSM (uni-directional only)  
TJ max.  
150 °C  
MECHANICAL DATA  
Case: DO-214AA (SMBJ)  
Molding compound meets UL 94 V-0 flammability rating  
TYPICAL APPLICATIONS  
Base P/N-M3  
commercial grade  
- halogen-free, RoHS compliant, and  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional use CA suffix (e.g. SMBJ10CA).  
Electrical characteristics apply in both directions.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
600  
UNIT  
W
(1)(2)  
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)  
Peak pulse current with a 10/1000 μs waveform  
PPPM  
(1)  
IPPM  
See next table  
100  
A
(2)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only  
Operating junction and storage temperature range  
IFSM  
A
TJ, TSTG  
- 55 to + 150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 14-Mar-12  
Document Number: 89284  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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