Datasheet > SMBJ16A

SMBJ16A

更新时间： 2024-11-23 04:51:47

品牌	Logo	应用领域
DAESAN		二极管光电二极管局域网
页数	文件大小	规格书
4页	709K
描述
POWER 600Watts VOLTAGE 5.0 to 188 Volts

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SMBJ16A 数据手册

POWER 600Watts

VOLTAGE 5.0 to 188 Volts

SMBJ5.0 THRU SMBJ188CA

Features

· Underwriters Laboratory recognition under UL standard

for safety 497B : Isolated loop curcuit protection

· Low profile package with built-in strain relief for surface

mounted applications

DO-214AA (SMB)

· Glass passivated junction

· Low incremental surge resistance, excellent clamping

capability

· 600W peak pulse power capability with a 10/1000μS

waveform, repetition rate(duty cycle) : 0.01%

· Very fast response time

0.083(2.11)

0.075(1.91)

0.155(3.94)

0.130(3.30)

0.185(4.70)

0.160(4.06)

· High temperature soldering guaranteed : 250℃/10 seconds

at terminals

0.012(0.31)

0.006(0.15)

0.096(2.44)

0.083(2.13)

Mechanical Data

· Case : JEDEC DO-214AA(SMB) molded plastic

over passivated chip

· Terminals : Solder plated , solderable per

MIL-STD-750, method 2026

0.008(0.203)

MAX.

0.050(1.27)

0.030(0.76)

0.220(5.59)

0.200(5.08)

· Polarity : For uni-directional types the band denotes

the cathode, which is positive with respect to the

anode under normal TVS operation

· Mounting Position : Any

Dimensions in inches and (millimeters)

· Weight : 0.003 ounce, 0.093 gram

Devices For Bidirectional Applications

· For bi-directional devices, use suffix C or CA (e.g. SMBJ10C, SMBJ10CA).

Electrical characteristics apply in both directions.

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified)

Symbols

Values

Units

Peak pulse power dissipation with a 10/1000μS waveform (Note 1,2. Fig. 1)

PPM

Minimum 600

Watts

Peak pulse current with a waveform (Note 1)

PPM

See next table

100

Amps

Peak forward surge current, 8.3mm single half sine-wave unidirectional only (Note 2)

FSM

Typical thermal resistance, junction to ambient (Note 3)

Typical thermal resistance, junction to lead

℃/W

℃

RθJA

RθJL

100

Operating junction and storage temperature range

,TSTG

-55 to +150

Notes:

(1) Non repetitive current pulse, per Fig.3 and derated above TA=25℃ per Fig.2

(2) Mounted on 0.2×0.2"(5.0×5.0mm) copper pads to each terminal

(3) Mounted on minimum recommended pad layout

12 3 4

中文翻译

下载PDF

与SMBJ16A相关器件

型号	品牌	获取价格	描述	数据表
SMBJ16A / CA	SWST	获取价格	瞬态电压抑制管
SMBJ16A / CA-AH	SWST	获取价格	瞬态电压抑制管
SMBJ16A.TB	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA,
SMBJ16A/5	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA, PLASTI
SMBJ16A/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBJ16A/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBJ16A-13-F	DIODES	获取价格	600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SMBJ16A-7	DIODES	获取价格	Trans Voltage Suppressor Diode, 600W, 16V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
SMBJ16A-AT	UNSEMI	获取价格	Surface Mount Transient Voltage Suppressors
SMBJ16A-AT	YAGEO	获取价格	瞬态抑制二极管 (车用)

与SMBJ16A相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBJ16A

SMBJ16A 数据手册

与SMBJ16A相关器件

与SMBJ16A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBJ16A

SMBJ16A 数据手册

与SMBJ16A相关器件

与SMBJ16A相关文章

您还可以找

您在本页遇到什么问题？