SMBJ5.0A thru SMBJ188A
Vishay General Semiconductor
www.vishay.com
®
Surface-Mount TRANSZORB Transient Voltage Suppressors
FEATURES
Available
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in unidirectional and bidirectional
• 600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
Available
SMB (DO-214AA)
• Excellent clamping capability
• Very fast response time
Cathode
Anode
• Low incremental surge resistance
(unidirectional)
(bidirectional)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
LINKS TO ADDITIONAL RESOURCES
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
3
D
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: SMB (DO-214AA)
VBR (bidirectional)
6.4 V to 231 V
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
V
BR (unidirectional)
6.4 V to 231 V
5.0 V to 188 V
600 W
VWM
PPPM
PD
5.0 W
I
FSM (unidirectional only)
100 A
TJ max.
150 °C
(“_X” denotes revision code e.g. A, B, ...)
Polarity
Unidirectional, bidirectional
SMB (DO-214AA)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Package
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
DEVICES FOR BIDIRECTION APPLICATIONS
For bidirectional devices use CA suffix (e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
Polarity: for unidirectional types the band denotes cathode
end, no marking on bidirectional types
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)
Peak pulse current with a 10/1000 μs waveform (1)
SYMBOL
PPPM
VALUE
600
UNIT
W
IPPM
See next table
5.0
A
Power dissipation on infinite heatsink at TA = 50 °C
Peak forward surge current 8.3 ms single half sine-wave unidirectional only (2)
Operating junction and storage temperature range
PD
W
IFSM
100
A
TJ, TSTG
-55 to +150
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2)
Revision: 30-Jun-2021
Document Number: 88392
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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