生命周期: | Obsolete | 包装说明: | R-PDSO-C2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.08 |
Is Samacsys: | N | 其他特性: | LOW INDUCTANCE |
最大击穿电压: | 205 V | 最小击穿电压: | 178 V |
击穿电压标称值: | 191.5 V | 最大钳位电压: | 259 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-214AA |
JESD-30 代码: | R-PDSO-C2 | 最大非重复峰值反向功率耗散: | 600 W |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性: | BIDIRECTIONAL |
最大功率耗散: | 1.5 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 160 V | 子类别: | Transient Suppressors |
表面贴装: | YES | 技术: | AVALANCHE |
端子形式: | C BEND | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMBJ160CA-TP | MCC |
获取价格 |
暂无描述 | |
SMBJ160CATR | ETC |
获取价格 |
TVS DIODE 160V 259V SMB | |
SMBJ160CE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 160V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
SMBJ160C-E3/52 | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 160V V(RWM), Bidirectional, | |
SMBJ160CE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 160V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
SMBJ160CE3/TR13 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 160V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
SMBJ160CE3/TR7 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 160V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
SMBJ160CE3TR | MICROSEMI |
获取价格 |
600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2 | |
SMBJ160C-GT3 | SENSITRON |
获取价格 |
Transient Suppressor, | |
SMBJ160CHE3/52 | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 160V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 |