5秒后页面跳转
SMBJ160CATR PDF预览

SMBJ160CATR

更新时间: 2024-02-11 00:28:10
品牌 Logo 应用领域
其他 - ETC 局域网光电二极管电视
页数 文件大小 规格书
5页 327K
描述
TVS DIODE 160V 259V SMB

SMBJ160CATR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-214AA包装说明:R-PDSO-C2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.08最大击穿电压:197 V
最小击穿电压:178 V击穿电压标称值:187.5 V
最大钳位电压:259 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e0湿度敏感等级:1
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
最大功率耗散:1.38 W认证状态:Not Qualified
最大重复峰值反向电压:160 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Tin/Lead (Sn90Pb10)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SMBJ160CATR 数据手册

 浏览型号SMBJ160CATR的Datasheet PDF文件第2页浏览型号SMBJ160CATR的Datasheet PDF文件第3页浏览型号SMBJ160CATR的Datasheet PDF文件第4页浏览型号SMBJ160CATR的Datasheet PDF文件第5页 
SMBJ SERIES  
Technical Data  
Data Sheet N0193, Rev. D  
Automotive Qualified  
SMBJ SERIES SURFACE MOUNT  
TRANSIENT VOLTAGE SUPPRESSOR  
Features  
Glass Passivated Die Construction  
600W Peak Pulse Power Dissipation  
5.0V- 200V Standoff Voltage  
Uni- and Bi-Directional Versions Available  
Excellent Clamping Capability  
Fast Response Time  
Plastic Case Material has UL Flammability  
Classification Rating 94V-O  
“-A” is an AEC-Q101 qualified device  
RoHS Compliant  
All SMC Parts are Traceable to the Wafer Lot  
Additional testing can be offered upon request  
SMB  
Circuit Diagram  
Mechanical Data  
Case: SMB Low Profile Molded Plastic  
Terminals: Solder Plated , Solderable per MIL-STD  
750, Method 2026  
Polarity: Cathode Band or Cathode Notch  
Weight:0.093 grams(approx.)  
Unipolar  
Bipolar  
Maximum Ratings and Thermal Characteristics@TA=25°C unless otherwise specified  
Parameter  
Symbol  
Value  
Units  
Peak Pulse Power Dissipation at  
TA=25°C by 10x1000μs Waveform  
(Fig.1)(Note 1), (Note 2)  
PPPM  
600  
W
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 2),(Note 3)  
IFSM  
100  
A
RθJL  
RθJA  
20  
°C/W  
°C/W  
Typical Thermal Resistance Junction to Lead  
Typical Thermal Resistance Junction to Ambient  
100  
Operating Junction and Storage  
Temperature Range  
TJ,TSTG  
-55 to 150  
°C  
Notes: 1. Non-repetitive current pulse , per Fig. 3 and derated above TA = 25°C per Fig. 2.  
2. Mounted on 5.0mm²(0.013mm thickland areas.  
3. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4pulses per minute maximum.  
China - Germany - Korea - Singapore - United States   
http://www.smc-diodes.com - sales@ smc-diodes.com   

与SMBJ160CATR相关器件

型号 品牌 获取价格 描述 数据表
SMBJ160CE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 160V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMBJ160C-E3/52 VISHAY

获取价格

Trans Voltage Suppressor Diode, 160V V(RWM), Bidirectional,
SMBJ160CE3/TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 160V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMBJ160CE3/TR13 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 160V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMBJ160CE3/TR7 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 160V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMBJ160CE3TR MICROSEMI

获取价格

600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
SMBJ160C-GT3 SENSITRON

获取价格

Transient Suppressor,
SMBJ160CHE3/52 VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, 160V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMBJ160C-HE3/52 VISHAY

获取价格

600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
SMBJ160CHE3/5B VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, 160V V(RWM), Bidirectional, 1 Element, Silicon, DO-2