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SMBJ160C PDF预览

SMBJ160C

更新时间: 2024-11-23 19:26:19
品牌 Logo 应用领域
鲁光 - LGE 二极管
页数 文件大小 规格书
4页 2524K
描述
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SMBJ160C 技术参数

Case Style:SMBPpk(W):600
MIN_(V):178.00MAX_(V):218.00
Vwm_(V):160.0Ir_(uA):1
Ippm_(A):2.09Vc_(V):287.0
class:Diodes

SMBJ160C 数据手册

 浏览型号SMBJ160C的Datasheet PDF文件第2页浏览型号SMBJ160C的Datasheet PDF文件第3页浏览型号SMBJ160C的Datasheet PDF文件第4页 
SMBJ Series  
Transient Voltage Suppressors  
Working Voltage: 5.0 to 440 V  
Peak Pulse Power: 600 W  
SMB/ DO-214AA  
Features  
˗
Glass passivated chip  
˗
600 W peak pulse power capability with a  
10/1000 ȝs waveform, repetitive rate (duty  
cycle):0.01 %  
˗
˗
˗
˗
˗
Low leakage  
Uni and Bidirectional unit  
Excellent clamping capability  
Very fast response time  
RoHS compliant  
Mechanical Data  
˗
˗
˗
Case: Molded plastic  
Epoxy: UL 94V-0 rate flame retardant  
Lead: Solderable per MIL-STD-750, method  
2026  
˗
˗
Polarity: Color band denotes cathode end  
except Bipolar  
Mounting position: Any  
Maximum Ratings(TA=25ɗ unless otherwise noted)  
Value  
600  
UNIT  
W
Parameter  
Symbol  
Peak power dissipation with a 10/1000ȝs waveform(1)  
PPP  
Peak pulse current wih a 10/1000ȝs waveform(1)  
Power dissipation on infinite heatsink at TL = 75 °C  
Peak forward surge current, 8.3 ms single half sine-  
IPP  
PD  
See Next Table  
5.0  
A
W
IFSM  
100  
A
wave unidirectional only(2)  
Maximum instantaneous forward voltage at 50 A for  
unidirectional only(3)  
VF  
3.5/5.0  
V
Operating junction and storage temperature range  
TJ, TSTG  
–55 to +150  
°C  
Note:  
(1)Non-repetitive current pulse per Fig.5 and derated above TA= 25 °C per Fig.1  
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(3)VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170301-P1  

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