Datasheet > SMBJ13A-H

SMBJ13A-H

更新时间： 2024-11-13 02:47:15

品牌	Logo	应用领域
音特电子 - YINT		电视
页数	文件大小	规格书
5页	1104K
描述
Automotive and High Reliability TVS Diodes

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中文翻译

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数据手册

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SMBJ13A-H 数据手册

Automotive and High Reliability TVS Diodes

Surface Mount – 600W > SMBJ - H Series

Trustworthy electronic circuit protection expert

SMBJ-H Series

General Information

The SMB-H series is designed to protect voltage sensitive components from

high voltage, high energy transients. They have excellent clamping capability, high

surge capability, low zener impedance and fast response time. The SMB-H series is

supplied in YINT Semiconductor’s exclusive, cost-effective, highly reliable and is

ideally suited for use in communication systems, automotive, numerical controls,

process controls, medical equipment, business machines, power supplies and many

other industrial/consumer Applications.

Molded plastic

glass passivated junction.

Features

Applications



Case: DO-214AA/SMB

TVS devices are ideal for the

protection of I/O Interfaces, V_CCbus

and other vulnerable circuits used in

Telecom, Computer, Industrial and

Consumer electronic applications.

For surface mounted applications in order to optimize board space.

Polarity: Color band denoted positive end (cathode) except Bidirectional.

Typical failure mode is short from over-specified voltage or current

High Temperature soldering:260°C/10 seconds at terminals.

Terminal: Solder plated, solderable per MIL-STD-750,Method 2026.

Electrical Characteristics (@ T_A= 25℃ Unless Otherwise Noted)

Parameter

Symbol

Value

Unit

Minimum Peak Pulse Power Dissipation (T = 1 ms) (note1 note 2)

P_PK

600

Watts

Peak Forward Surge Current

8.3 ms Single Half Sine Wave Superimposed on Rated Load

(JEDEC Method) (Note 3)

I_FSM

100

Amps

Steady State Power Dissipation @ TL = 75 °C

P_M(AV)

V_F

5.0

Watts

Volts

Maximum Instantaneous Forward Voltage @ I _PP= 50 A

(For Unidirectional Units Only)(note4 note 5)

3.5/5

Operating Temperature Range

T_J

-55 to +150

°C

Storage Temperature Range

NOTES:

T_STG

1. Non-repetitive current pulse, per Pulse Waveform graph and derated above T_A= 25 °C per Pulse Derating Curve.

2. Thermal Resistance Junction to Lead.

3. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).

4. Single Phase, Half Wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20 %.

5. V_F<3.5V for V_BR< 200V and V_F<5.0V for V_BR> 201V.

www.yint.com.cn

Rev:19.3

12 3 4 5

中文翻译

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与SMBJ13A-H相关器件

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SMBJ13AHE3/52	VISHAY	获取价格	TVS DIODE 13V 21.5V DO214AA
SMBJ13AHE3/5B	VISHAY	获取价格	TVS DIODE 13V 21.5V DO214AA
SMBJ13A-HR	LITTELFUSE	获取价格	SMBJ HR系列高可靠性瞬态抑制二极管是经升级筛选的Littelfuse即用型高可靠性瞬
SMBJ13A-HRA	LITTELFUSE	获取价格	TVS DIODE 13V 21.5V DO214AA
SMBJ13A-M3/52	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, HALOGEN FREE AND ROHS COMPLIANT
SMBJ13A-M3/5B	VISHAY	获取价格	TVS DIODE 13V 21.5V DO214AA
SMBJ13AQ	MCC	获取价格	Tape :3K/Reel, 48K/Ctn;
SMBJ13AQ	YANGJIE	获取价格	SMB
SMBJ13A-Q	BOURNS	获取价格	TVS DIODE 13V 21.5V SMB
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