5秒后页面跳转
SMBJ12CA-13-F PDF预览

SMBJ12CA-13-F

更新时间: 2024-11-23 02:56:35
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
4页 76K
描述
600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

SMBJ12CA-13-F 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:10 weeks风险等级:0.71
其他特性:EXCELLENT CLAMPING CAPABILITY最大击穿电压:15.3 V
最小击穿电压:13.3 V击穿电压标称值:14.3 V
最大钳位电压:19.9 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:600 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:BIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified最大重复峰值反向电压:12 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

SMBJ12CA-13-F 数据手册

 浏览型号SMBJ12CA-13-F的Datasheet PDF文件第2页浏览型号SMBJ12CA-13-F的Datasheet PDF文件第3页浏览型号SMBJ12CA-13-F的Datasheet PDF文件第4页 
SMBJ5.0(C)A - SMBJ170(C)A  
600W SURFACE MOUNT TRANSIENT VOLTAGE  
SUPPRESSOR  
Features  
·
·
·
·
·
·
·
600W Peak Pulse Power Dissipation  
5.0V - 170V Standoff Voltages  
Glass Passivated Die Construction  
Uni- and Bi-Directional Versions Available  
Excellent Clamping Capability  
B
SMB  
Min  
Dim  
A
Max  
3.94  
4.70  
2.21  
0.31  
5.59  
0.20  
1.52  
2.62  
Fast Response Time  
Lead Free Finish/RoHS Compliant (Note 4)  
3.30  
4.06  
1.91  
0.15  
5.00  
0.10  
0.76  
2.00  
A
J
C
B
C
Mechanical Data  
D
·
·
Case: SMB  
E
D
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
G
H
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Lead Free Plating (Matte Tin Finish).  
Solderable per MIL-STD-202, Method 208  
J
G
H
E
All Dimensions in mm  
·
·
Polarity Indicator: Cathode Band  
(Note: Bi-directional devices have no polarity indicator.)  
Marking: Date Code and Marking Code  
See Page 4  
·
·
Ordering Info: See Page 4  
Weight: 0.1 grams (approximate)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
PPK  
Value  
600  
4.8  
Unit  
W
Peak Pulse Power Dissipation  
(Non repetitive current pulse derated above TA = 25°C) (Note 1)  
Pder  
Peak Power Derating Above 25°C  
W/°C  
A
Peak Forward Surge Current, 8.3ms Single Half Sine Wave  
Superimposed on Rated Load (Notes 1, 2, & 3)  
IFSM  
100  
5.0  
PM(AV)  
VF  
Steady State Power Dissipation @ TL = 75°C  
W
Instantaneous Forward Voltage @ IPP = 35A VBR<100V  
3.5  
5.0  
V
V
(Notes 1, 2, & 3)  
VBR³100V  
Tj  
Operating Temperature Range  
Storage Temperature Range  
-55 to +150  
-55 to +175  
°C  
°C  
TSTG  
Notes:  
1. Valid provided that terminals are kept at ambient temperature.  
2. Measured with 8.3ms single half sine-wave. Duty cycle = 4 pulses per minute maximum.  
3. Unidirectional units only.  
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.  
DS19002 Rev. 15 - 2  
1 of 4  
SMBJ5.0(C)A - SMBJ170(C)A  
www.diodes.com  
ã Diodes Incorporated  

SMBJ12CA-13-F 替代型号

型号 品牌 替代类型 描述 数据表
SMBJ12CA BOURNS

功能相似

SMBJ Transient Voltage Suppressor Diode Series
1SMB12CAT3G ONSEMI

功能相似

Watt Peak Power Zener Transient Voltage Suppressors

与SMBJ12CA-13-F相关器件

型号 品牌 获取价格 描述 数据表
SMBJ12CA-AT UNSEMI

获取价格

Surface Mount Transient Voltage Suppressors
SMBJ12CA-AT YAGEO

获取价格

瞬态抑制二极管 (车用)
SMBJ12CA-AU JJM

获取价格

车规瞬态电压抑制二极管
SMBJ12CAE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBJ12CA-E3/2C VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBJ12CA-E3/51 VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBJ12CA-E3/52 VISHAY

获取价格

TVS DIODE 12V 19.9V DO214AA
SMBJ12CA-E3/55 VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBJ12CA-E3/5B VISHAY

获取价格

TVS DIODE 12V 19.9V DO214AA
SMBJ12CAE3/TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-21