Datasheet > SMBJ11A-HR

SMBJ11A-HR

更新时间： 2024-11-14 13:45:19

品牌	Logo	应用领域
力特 - LITTELFUSE		脉冲瞬态抑制二极管
页数	文件大小	规格书
6页	874K
描述
SMBJ HR系列高可靠性瞬态抑制二极管是经升级筛选的Littelfuse即用型高可靠性瞬态抑制二极管。它采用紧凑的DO-214AA SMB封装，额定脉冲峰值功率耗损为600W。这些元件经过特

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中文翻译

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数据手册
替代型号

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SMBJ11A-HR 数据手册

TVS Diode

Surface Mount – 600W > SMBJ-HR series

Pb e3

RoHS

SMBJ-HR Series

Description

The SMBJ-HR High Reliability series is designed

speciﬁcally to protect sensitive electronic equipment from

voltage transients induced by lightning and other transient

voltage events.

Uni-directional

Bi-directional

Features

• 600W peak pulse power

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Excellent clamping

capability

• Low incremental surge

resistance

• Typical I_Rless than 1µA

above 12V

• V_BR@T_J= V_BR@25°C

x (1+αT x (T_J- 25))

(αT:Temperature

Coefﬁcient, typical value

is 0.1%)

• Glass passivated chip

junction

• High temperature

soldering guaranteed:

260°C/40 seconds at

terminals

• Plastic package is

ﬂammability rated V-0 per

UL 94

• Meet MSL level1, per

J-STD-020, LF maximun

peak of 260°C.

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

• Pb-free E3 means 2nd

level interconnect is

Pb-free and the terminal

ﬁnish material is tin(Sn)

(IPC/JEDEC J-STD-

609A.01)

Agency Approvals

Agency

Agency File Number

E230531

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

• For surface mounted

applications to optimize

board space

Parameter

Symbol

Value

Unit

• Low proﬁle package

Peak Pulse Power Dissipation at

TA=25ºC by 10/1000µs Waveform (Fig.2)(Note

1), (Note 2)

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC 61000-4-2 ESD

P_PPM

600

Power Dissipation on Inﬁnite Heat Sink at

T_A=50^OC

P_M(AV)

I_FSM

V_F

5.0

100

3.5V

Peak Forward Surge Current, 8.3ms Single Half

Sine Wave (Note 3)

Maximum Instantaneous Forward Voltage at

50A for Unidirectional Only

Operating Junction and StorageTemperature

Range

T_J, T_STG-65 to 150 °C

15kV(Air), 8kV (Contact)

• ESD protection of data

lines in accordance with

IEC 61000-4-2

TypicalThermal Resistance Junction to Lead

R_ƟJL

°C/W

TypicalThermal Resistance Junction to Ambient R_ƟJA

100

Notes:

• UL Recognized to ANSI/

UL 497B: Protectors for

Data Communications and

Fire-Alarm Circuits.

1. Non-repetitive current pulse per Fig. 4 and derated above T_A= 25^OC per Fig. 3.

2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.

• EFT protection of data

lines in accordance with

IEC 61000-4-4

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only, duty

cycle=4 per minute maximum.

• Built-in strain relief

• Fast response time:

typically less than 1.0ps

from 0V to BV min

Functional Diagram

Applications

TVS Components are ideal for the protection of I/O

Interfaces, V_CCbus and other vulnerable circuits used in

Telecom, Computer, Industrial and Consumer electronic

applications.

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 04/06/20

12 3 4 5 6

中文翻译

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SMBJ11A-HR 替代型号

型号	品牌	替代类型	描述	数据表
SMBJ11A-HRA	LITTELFUSE	完全替代	TVS DIODE 11V 18.2V DO214AA
SMBJ11A	LITTELFUSE	完全替代	Silicon Avalanche Diodes - 600W Surface Mount Transient Voltage Suppressors

与SMBJ11A-HR相关器件

型号	品牌	获取价格	描述	数据表
SMBJ11A-HRA	LITTELFUSE	获取价格	TVS DIODE 11V 18.2V DO214AA
SMBJ11A-M3/52	VISHAY	获取价格	TVS DIODE 11V 18.2V DO214AA
SMBJ11A-M3/5B	VISHAY	获取价格	TVS DIODE 11V 18.2V DO214AA
SMBJ11AQ	MCC	获取价格	Tape :3K/Reel, 48K/Ctn;
SMBJ11AQ	YANGJIE	获取价格	SMB
SMBJ11A-Q1	ANBON	获取价格	SMB
SMBJ11AT3	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA,
SMBJ11AT3	CRYDOM	获取价格	Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBJ11A-T3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBJ11ATR	MICROSEMI	获取价格	600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC PACKAGE-2

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