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SMBJ110A-M3/52 PDF预览

SMBJ110A-M3/52

更新时间: 2024-11-14 22:14:59
品牌 Logo 应用领域
威世 - VISHAY 电视
页数 文件大小 规格书
6页 121K
描述
TVS DIODE 110V 177V DO214AA

SMBJ110A-M3/52 数据手册

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SMBJ5.0A thru SMBJ188A  
Vishay General Semiconductor  
www.vishay.com  
®
Surface-Mount TRANSZORB Transient Voltage Suppressors  
FEATURES  
Available  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in unidirectional and bidirectional  
• 600 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate  
(duty cycle): 0.01 %  
Available  
SMB (DO-214AA)  
• Excellent clamping capability  
• Very fast response time  
Cathode  
Anode  
• Low incremental surge resistance  
(unidirectional)  
(bidirectional)  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
LINKS TO ADDITIONAL RESOURCES  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
3
D
3
D
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3D Models  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: SMB (DO-214AA)  
VBR (bidirectional)  
6.4 V to 231 V  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
V
BR (unidirectional)  
6.4 V to 231 V  
5.0 V to 188 V  
600 W  
VWM  
PPPM  
PD  
5.0 W  
I
FSM (unidirectional only)  
100 A  
TJ max.  
150 °C  
(“_X” denotes revision code e.g. A, B, ...)  
Polarity  
Unidirectional, bidirectional  
SMB (DO-214AA)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
Package  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
DEVICES FOR BIDIRECTION APPLICATIONS  
For bidirectional devices use CA suffix (e.g. SMBJ10CA).  
Electrical characteristics apply in both directions.  
Polarity: for unidirectional types the band denotes cathode  
end, no marking on bidirectional types  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1)  
SYMBOL  
PPPM  
VALUE  
600  
UNIT  
W
IPPM  
See next table  
5.0  
A
Power dissipation on infinite heatsink at TA = 50 °C  
Peak forward surge current 8.3 ms single half sine-wave unidirectional only (2)  
Operating junction and storage temperature range  
PD  
W
IFSM  
100  
A
TJ, TSTG  
-55 to +150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 30-Jun-2021  
Document Number: 88392  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

SMBJ110A-M3/52 替代型号

型号 品牌 替代类型 描述 数据表
SMBJ110AHE3/5B VISHAY

类似代替

TVS DIODE 110V 177V DO214AA
SMBJ110A-E3/5B VISHAY

类似代替

TVS DIODE 110V 177V DO214AA
SMBJ110A-E3/52 VISHAY

类似代替

TVS DIODE 110V 177V DO214AA

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