Datasheet > SMBG8.5CA-E3/52

SMBG8.5CA-E3/52

更新时间： 2024-10-29 22:48:31

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
5页	93K
描述
TVS DIODE 8.5V 14.4V DO215AA

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中文翻译

获取价格

数据手册
替代型号

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SMBG8.5CA-E3/52 数据手册

SMBG5.0A thru SMBG188CA

www.vishay.com

Vishay General Semiconductor

Surface Mount TRANSZORB

Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate

(duty cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

SMBG (DO-215AA)

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

V_WM

5.0 V to 188 V

_BR(uni-directional)

6.4 V to 231 V

600 W

TYPICAL APPLICATIONS

_BR(bi-directional)

P_PPM

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, automotive, and telecommunication.

_FSM(uni-directional only)

100 A

T_Jmax.

150 °C

Polarity

Uni-directional, bi-directional

SMBG (DO-215AA)

MECHANICAL DATA

Case: SMBG (DO-215AA) 

Package

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3

RoHS-compliant, industrial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use CA suffix (e.g. SMBG10CA).

Electrical characteristics apply in both directions.

meets JESD 201 class 2 whisker test

Polarity: for uni-directional types the band denotes cathode

end, no marking on bi-directional types

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

VALUE

600

UNIT

Peak pulse power dissipation with a 10/1000 μs waveform ⁽¹⁾⁽²⁾(fig. 1)

Peak pulse current with a 10/1000 μs waveform ⁽¹⁾

I_PPM

See next table

100

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Operating junction and storage temperature range

I_FSM

T_J, T_STG

-55 to +150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(2)

Revision: 16-Jan-18

Document Number: 88456

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

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SMBG8.5CA-E3/52 替代型号

型号	品牌	替代类型	描述	数据表
SMBG8.5CAHE3/5B	VISHAY	完全替代	TVS DIODE 8.5V 14.4V DO215AA
SMBG8.5CAHE3/52	VISHAY	功能相似	TVS DIODE 8.5V 14.4V DO215AA

与SMBG8.5CA-E3/52相关器件

型号	品牌	获取价格	描述	数据表
SMBG8.5CAHE3/52	VISHAY	获取价格	TVS DIODE 8.5V 14.4V DO215AA
SMBG8.5CAHE3/5B	VISHAY	获取价格	TVS DIODE 8.5V 14.4V DO215AA
SMBG8.5CATR	MICROSEMI	获取价格	600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC PACKAGE-2
SMBG8.5CE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMBG8.5HE3/52	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBG8.5HE3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBG8.5-HE3/5B	VISHAY	获取价格	600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2 PIN
SMBG8.5-TP	MCC	获取价格	Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-215AA, SMBG, 2 PIN
SMBG8.5TR	MICROSEMI	获取价格	600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC PACKAGE-2
SMBG80	MICROSEMI	获取价格	UNI- AMD BI-DIRECTIONAL SURFACE MOUNT

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