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SMBG6.0-E3/51 PDF预览

SMBG6.0-E3/51

更新时间: 2024-10-29 08:54:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 97K
描述
Trans Voltage Suppressor Diode, 600W, 6V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2 PIN

SMBG6.0-E3/51 数据手册

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SMBG5.0 thru SMBG188CA  
Vishay General Semiconductor  
Surface Mount TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in Unidirectional and Bidirectional  
• 600 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty cycle):  
0.01 %  
• Excellent clamping capability  
DO-215AA (SMBG)  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020C, LF max peak  
of 260 °C  
• Solder Dip 260 °C, 40 seconds  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
MAJOR RATINGS AND CHARACTERISTICS  
TYPICAL APPLICATIONS  
VWM  
PPPM  
5.0 V to 188 V  
600 W  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive and  
telecommunication.  
I
FSM (Unidirectional only)  
Tj max.  
100 A  
150 °C  
DEVICES FOR BIDIRECTION APPLICATIONS  
For bidirectional devices use C or CA suffix  
(e.g. SMBG10CA).  
MECHANICAL DATA  
Case: DO-215AA (SMBG)  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
Electrical characteristics apply in both directions.  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: For unidirectional types the band denotes  
cathode end, no marking on bidirectional types  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
VALUE  
Minimum 600  
see next table  
100  
UNIT  
W
Peak pulse power dissipation with a 10/1000 µs waveform (1,2) (see Fig. 1)  
Peak pulse current with a 10/1000 µs waveform (1)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Operating junction and storage temperature range  
IPPM  
A
IFSM  
A
TJ, TSTG  
- 55 to + 150  
°C  
Note:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal  
Document Number 88456  
08-Sep-06  
www.vishay.com  
1

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