Datasheet > SMAJP4KE120CATR

SMAJP4KE120CATR

更新时间： 2024-11-25 06:41:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网光电二极管
页数	文件大小	规格书
4页	305K
描述
Trans Voltage Suppressor Diode, 400W, 102V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC, PLASTIC, DO-214BA, SMAJ, 2 PIN

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SMAJP4KE120CATR 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	零件包装代码：	DO-214BA
包装说明：	R-PDSO-C2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.23
最大击穿电压：	126 V	最小击穿电压：	114 V
击穿电压标称值：	120 V	最大钳位电压：	165 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-214AC
JESD-30 代码：	R-PDSO-C2	JESD-609代码：	e0
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	400 W
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	BIDIRECTIONAL	最大功率耗散：	1.52 W
认证状态：	Not Qualified	最大重复峰值反向电压：	102 V
子类别：	Transient Suppressors	表面贴装：	YES
技术：	AVALANCHE	端子面层：	TIN LEAD
端子形式：	C BEND	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

SMAJP4KE120CATR 数据手册

SMAJP4KE6.8 thru SMAJP4KE400CA, e3

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

PACKAGE

This Transient Voltage Suppressor (TVS) series is an economical molded

surface mount package with very low thermal resistance due to its unique

axial subassembly. It is used for automotive applications and others to

protect voltage sensitive components from destructive or partial degradation.

They have a peak pulse power rating of 400 watts for 1 ms as depicted in

Figures 1 and 2. The package is configured for easy pick and place onto PC

Boards for automated handling. The J-bend terminations also provide stress

relief for use on a variety of PC Board materials.

DO-214AC or BA

(SMAJ)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Economical series for surface mounting

•

Suppresses transient up to 400 watts @ 10/1000

μs (see Figure 1)

Protects sensitive components such as IC’s,

CMOS, Bipolar, BiCMOS, ECL, DTL, T²L, etc.

Available in both unidirectional and bi-directional (add

C or CA suffix to part number for bidirectional)

•

Voltages from 6.8 to 400 V Breakdown (V_BR

Fast Response

)

•

Protection from switching transients & induced RF

Compliant to IEC61000-4-2 and IEC61000-4-4 for

ESD and EFT protection respectively

Moisture classification is Level 1 per IPC/JEDEC

J-STD-020B with no dry pack

•

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

Class 1: SMAJP4KE6.8 to SMAJP4KE91A or CA

Class 2: SMAJP4KE6.8 to SMAJP4KE47A or CA

Class 3: SMAJP4KE6.8 to SMAJP4KE24A or CA

Class 4: SMAJP4KE6.8 to SMAJP4KE12A or CA

•

Optional 100% screening for avionics grade is

available by adding MA prefix to part number for

added 100% temperature cycle -55^oC to +125^oC

(10X) as well as surge (3X) and 24 hours HTRB with

post test V_Z& I_R(in the operating direction for

unidirectional or both directions for bidirectional)

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, or JANTXV are available by

adding MQ, MX, or MV prefixes respectively to part

numbers

Secondary lightning protection per IEC61000-4-5

with 12 Ohms source impedance:

Class 1: SMAJP4KE6.8 to SMAJP4KE30A or CA

Class 2: SMAJP4KE6.8 to SMAJP4KE15A or CA

RoHS Compliant devices available by adding “e3” suffix

NOTE: Equivalent axial-leaded packages available

as P4KE6.8 to P4KE400CA

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Peak Pulse Power dissipation at 25^ºC: 400 watts at

•

CASE: Molded epoxy package meets UL94V-0

10/1000 μs (also see Fig 1,2, and 4)

TERMINALS: Tin-lead or RoHS compliant

annealed matte-Tin plating solderable per MIL-

STD-750, method 2026

•

Impulse repetition rate (duty factor): 0.01%

_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

•

POLARITY: Cathode designated by cathode band

for unidirectional (none for bidirectional)

•

Operating and Storage temperature: -65^ºC to +150^ºC

Thermal resistance: 17 ^ºC/W junction to lead or

82^ºC/W junction to ambient when mounted on FR4

PC board (1 oz Cu) with recommended footprint (see

last page)

Steady-State Power dissipation: 5 watts at T_L= 65^oC

or 1.52 watts at T_A= 25^ºC when mounted on FR4 PC

board with recommended footprint

Marking only shows 4KExxx digits of part number

(e.g. 4KE6.8, 4KE12CA, 4KE30A, etc.)

•

Weight: 0.1 grams (approximate)

Tape & Reel option: Standard per EIA-481-1-A

with 12 mm tape (add “TR” suffix to part number)

750 per 7 inch reel or 2500 per 13 inch reel

•

Forward Surge Current at 25ºC: 40 amps peak, 8.3

ms half-sine wave. Maximum voltage of 3.50 V

(unidirectional only)

Solder temperatures: 260 ^ºC for 10 s (maximum)

6-20-2007 REV D

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与SMAJP4KE120CATR相关器件

型号	品牌	获取价格	描述	数据表
SMAJP4KE120CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 97.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-
SMAJP4KE120CTRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 97.2V V(RWM), Bidirectional,
SMAJP4KE120E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 97.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMAJP4KE120E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 97.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMAJP4KE120-TP-HF	MCC	获取价格	Trans Voltage Suppressor Diode
SMAJP4KE120TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 97.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMAJP4KE12A	MCC	获取价格	Transient Voltage Suppressor 6.8 to 550 Volts 400 Watt
SMAJP4KE12A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMAJP4KE12AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMAJP4KE12AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon, DO

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