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SMAJP4KE110 PDF预览

SMAJP4KE110

更新时间: 2024-02-18 09:10:46
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其他 - ETC /
页数 文件大小 规格书
4页 331K
描述
Transient Voltage Suppressor

SMAJP4KE110 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-214BA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.22
最大击穿电压:116 V最小击穿电压:105 V
击穿电压标称值:110 V最大钳位电压:152 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e0
湿度敏感等级:1最大非重复峰值反向功率耗散:400 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:1.52 W
认证状态:Not Qualified最大重复峰值反向电压:94 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:TIN LEAD
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SMAJP4KE110 数据手册

 浏览型号SMAJP4KE110的Datasheet PDF文件第2页浏览型号SMAJP4KE110的Datasheet PDF文件第3页浏览型号SMAJP4KE110的Datasheet PDF文件第4页 
SMAJP4KE6.8 thru SMAJP4KE400CA  
Transient Voltage Suppressor  
Breakdown Voltage 6.8 to 400 Volts  
Peak Pulse Power  
400 Watts  
Features  
Breakdown Voltages (VBR)from 6.8 to 400V  
CASE: SMA (DO214AC)  
400W peak pulse power capability with a 10/1000μs  
waveform, repetitive rate (duty cycle):0.01%  
Fast Response Time  
Low incremental surge resistance  
Excellent clamping capability  
Available in uni-directional and bi-direcona
High temperature soldering guaranteed10  
seconds, 0.375” (9.5mm) lead length5ls. g)  
tension  
Application  
Use isensitive electronics protectioagainst vltage  
transies induced by inductive load witchng and  
lighting oICS, MOSFE, signal lines of sensor units for  
consumercoputer, industrial, automotive and  
telecommuicaton  
MechanicaDaa  
Case: Voi-free transfer molded thermosetting epoxy  
body meeting UL94V-O  
Terminals: Tin-Lead or ROHS Compliant annealed  
matte-Tin plating readily solderable per MIL-STD-750,  
Method 2026  
Marking: Body marked with part number  
Polarity: Cathode indicated by band. No marking on bi-  
directional devices  
Dimenons in inches nd (millimeters)  
Weight: 0.053gApproximately)  
Maximum Ratings ad Electrical Characteristics @ 25OC unless otherwise specified  
Conditions  
Symbol  
Value  
400  
Unit  
W
PPPM  
eak pulse power capability with a 10/1000μs  
Peak pulse current with a 10/1000μs  
IPPM  
SEE TABLE1  
5.0  
A
Steady state power dissipation at TL=65,Lead lengths 0.375”(10mm)  
W
PM(AV)  
Steady state power dissipation at TA=25when mounted on FR4 PC  
described for thermal resistance  
1.52  
W
IFSM  
VF  
Peak forward surge current,8.3ms single half sine-wave unidirectional only⑴  
Maximum instantaneous forward voltage at 30A for unidirectional only⑵  
Thermal resistance junction to lead  
40  
3.5/5.0  
17  
A
V
RθJL  
/W  
/W  
RθJA  
Thermal resistance junction to ambient  
82  
TJ, TSTG  
Operating and Storage Temperature  
-65 to +150  
Notes:  
Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum  
VF=3.5V for SMAJP4KE220(A) and below; VF=5.0V for SMAJP4KE250(A) and above  
Document Number: SMAJP4KE6.8 thru SMAJP4KE400CA  
Feb.29, 2012  
www.smsemi.com  
1

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