Datasheet > SMAJ7.0CA-Q1

SMAJ7.0CA-Q1

更新时间： 2024-11-30 18:06:39

品牌	Logo	应用领域
安邦 - ANBON		/
页数	文件大小	规格书
5页	3823K
描述
SMA

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SMAJ7.0CA-Q1 数据手册

SMAJ-Q1 Series

Package outline

Features

• 400W peak pulse power capability with a 10/1000 μs

waveform, repetition rate (duty cycle): 0.01%.

SMA/DO-214AC

• Low profile surface mounted application in order to

optimize board space.

• Excellent clamping capability.

• Low incremental surge resistance.

• Fast response time from 0V to VBR, typically less than

1 ps for uni-directional & 5 ns for bi-directional types.

0.118(3.00)

0.096(2.45)

0.067 (1.70)

0.051 (1.30)

• Glass passivated chip junction.

• Lead-free parts meet RoHS requirments.

0.177(4.50)

0.157(3.99)

Compliant to Halogen-free

•

0.012(0.305)

0.006(0.152)

Suffix "-Q1" for AEC-Q101.

0.096(2.42)

0.078(1.98)

Mechanical data

0.060(1.52)

0.030(0.76)

• Epoxy:UL94-V0 rated flame retardant

• Case : Molded plastic, DO-214AC / SMA

• Terminals : Solder plated, solderable per

0.008(0.203)MAX.

0.208(5.28)

0.188(4.80)

MIL-STD-750, Method 2026

• Polarity : Indicated by cathode band

Dimensions in inches and (millimeters)

• Mounting Position : Any

Maximum ratings ^{(AT T}_A⁼²⁵^o^{C unless otherwise noted)}

Value

400

UNIT

Symbol

P_PPM

PARAMETER

CONDITIONS

Peak Power Dissipation

with a 10/1000 μs waveform,

Note 1, 2 & Fig. 1

with a 10/1000 μs waveform

at T_L=75^OC, Note 2

I_PPM

See Table 1

1.0

Peak Pulse current

Steady State Power Dissipation

P_M(AV)

8.3ms Single Half Sine-Wave, Note 3

Peak Forward Surge Current

I_FSM

V_F

at 25A

For Uni-Directional Types Only, Note 4

Maximum Instantaneours Forward Voltage

3.5/6.5

^OC

Operating temperature range

Storage temperature range

T_J

-55 ~ +150

T_STG

Note 1. Non-repetitive current pulse, per Fig. 3 and derated above T_A=25^OC per Fig. 2

2. Mounted on copper pad area of 0.2"x0.2" (5.0x5.0 mm) per Fig 5

3. Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum

4. V_F< 3.5V for V_BR< 200V and V_F< 6.5V for V_BR>201V.

http://www.anbonsemi.com

TEL:+86-755-23776891

FAX:+86-755-81482182

Document ID

AS-1080002

Issued Date

2018/03/08

Revised Date

2023/10/12

Revision

Page.

Page 1

12 3 4 5

中文翻译

下载PDF

与SMAJ7.0CA-Q1相关器件

型号	品牌	获取价格	描述	数据表
SMAJ7.0CA-TP	MCC	获取价格	400 Watt Transient Voltage Suppressors 5.0 to 440 Volts
SMAJ7.0CATR	ETC	获取价格	TVS DIODE 7V 12V SMA
SMAJ7.0C-E3/5A	VISHAY	获取价格	Trans Voltage Suppressor Diode, 300W, 7V V(RWM), Bidirectional, 1 Element, Silicon, DO-214
SMAJ7.0CE3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 7V V(RWM), Bidirectional, 1 Element, Silicon, DO-214
SMAJ7.0C-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 400W, 7V V(RWM), Bidirectional, 1 Element, Silicon, DO-214
SMAJ7.0C-GT3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 400W, 7V V(RWM), Bidirectional, 1 Element, Silicon, DO-214
SMAJ7.0C-T3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 400W, 7V V(RWM), Bidirectional, 1 Element, Silicon, DO-214
SMAJ7.0CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 7V V(RWM), Bidirectional, 1 Element, Silicon, DO-214
SMAJ7.0D / CD	SWST	获取价格	瞬态电压抑制管
SMAJ7.0-E3	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-21

与SMAJ7.0CA-Q1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

62

产品中心

服务支持

精选活动

关于我们

帮助中心

SMAJ7.0CA-Q1

SMAJ7.0CA-Q1 数据手册

与SMAJ7.0CA-Q1相关器件

与SMAJ7.0CA-Q1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMAJ7.0CA-Q1

SMAJ7.0CA-Q1 数据手册

与SMAJ7.0CA-Q1相关器件

与SMAJ7.0CA-Q1相关文章

您还可以找

您在本页遇到什么问题？