Datasheet > SMAJ7.0CE3/TR13

SMAJ7.0CE3/TR13

更新时间： 2024-11-30 08:47:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
6页	484K
描述
Trans Voltage Suppressor Diode, 400W, 7V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

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SMAJ7.0CE3/TR13 数据手册

SMAJ5.0e3 to SMAJ440CAe3

400W Transient Voltage Suppressor (TVS) protection device

Main product characteristics

V_WM

V_BR(min)- V_BR(max)

I_PP

5.0V – 440V

6.40V – 543V

41.7A – 0.6A

9.6V – 713V

400W

RoHS

COMPLIANT

V_CL(MAX)

P_PP

DO-214AC (SMA)

Description and applications

This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or

radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response

time of clamping action is virtually instantaneous. As a result, they may also be used effectively for protection from

ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments and induced RF. They can

also be used for protecting other sensitive components from secondary lightning effects per IEC61000-4-5 and class

levels defined herein. Microsemi also offers numerous other TVS products to meet higher and lower power demands

and special applications.

•

RoHS compliant (2002/95/EC), MSL level 1 (J-STD-020)

Qualified to automotive grade – AEC Q101

Bi-directional devices are denoted by the suffixes C or CA, electrical characteristics apply in both directions.

Maximum ratings and characteristics⁽¹⁾

Symbol

P_PPM

Parameter

Value

400

Unit

Peak power dissipation with a 10/1000µs waveform ⁽²⁾⁽³⁾(fig.1)

Peak pulse current with a 10/1000µs waveform ⁽²⁾(fig. 3)

I_PPM

See next table

Steady state power dissipation at T_L= 75ºC, lead lengths 0.375”

P_M(AV)

I_FSM

V_F

1.0

(9.5mm) ⁽³⁾

Non repetitive peak forward surge current

(8.3ms single half sine wave) unidirectional only ⁽⁴⁾

Maximum instantaneous forward voltage at 25A for unidirectional

only ⁽⁵⁾

3.5 / 5.0

R_ΘJL

R_ΘJA

T_STG

T_J

Typical thermal resistance junction to lead

Typical thermal resistance junction to ambient

Storage temperature

ºC/W

ºC

120

-55 to +150

Junction temperature

ºC

(1) All ratings at 25ºC unless specified otherwise

(2) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25ºC per Fig. 2. rating is 300W above 78V.

(3) Mounted on copper pad area of 0.2” x 0.2” (5.0mm x 5.0mm)

(4) Mounted on minimum recommended pad layout

(5) V_F=3.5V for devices of V_BR< 220V and V_F=5.0V maximum for devices of V_BR> 220V

Mar Rev C

1/6

www.Microsemi.com

12 3 4 5 6

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与SMAJ7.0CE3/TR13相关器件

型号	品牌	获取价格	描述	数据表
SMAJ7.0C-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 400W, 7V V(RWM), Bidirectional, 1 Element, Silicon, DO-214
SMAJ7.0C-GT3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 400W, 7V V(RWM), Bidirectional, 1 Element, Silicon, DO-214
SMAJ7.0C-T3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 400W, 7V V(RWM), Bidirectional, 1 Element, Silicon, DO-214
SMAJ7.0CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 7V V(RWM), Bidirectional, 1 Element, Silicon, DO-214
SMAJ7.0D / CD	SWST	获取价格	瞬态电压抑制管
SMAJ7.0-E3	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMAJ7.0E3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMAJ7.0-G	WEITRON	获取价格	暂无描述
SMAJ7.0-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 400W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMAJ7.0-GT3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 400W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-21

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