是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | R-PDSO-C2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.37 | Is Samacsys: | N |
其他特性: | PRSM-MIN, UL RECOGNIZED | 最大击穿电压: | 73.7 V |
最小击穿电压: | 66.7 V | 击穿电压标称值: | 70.2 V |
最大钳位电压: | 96.8 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95代码: | DO-214AC | JESD-30 代码: | R-PDSO-C2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
最大非重复峰值反向功率耗散: | 400 W | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性: | BIDIRECTIONAL |
最大功率耗散: | 1.5 W | 最大重复峰值反向电压: | 60 V |
子类别: | Transient Suppressors | 表面贴装: | YES |
技术: | AVALANCHE | 端子面层: | Tin (Sn) |
端子形式: | C BEND | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMAJ60CATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-21 | |
SMAJ60CE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-21 | |
SMAJ60C-G | WEITRON |
获取价格 |
Transient Suppressor, | |
SMAJ60C-GT3 | SENSITRON |
获取价格 |
Trans Voltage Suppressor Diode, 60V V(RWM), Bidirectional | |
SMAJ60CHE3/5A | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 300W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-21 | |
SMAJ60C-HE3/5A | VISHAY |
获取价格 |
400W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN | |
SMAJ60CTR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-21 | |
SMAJ60CTRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 60V V(RWM), Bidirectional, | |
SMAJ60D / CD | SWST |
获取价格 |
瞬态电压抑制管 | |
SMAJ60E3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 60V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 |