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SMAJ60E3/TR13 PDF预览

SMAJ60E3/TR13

更新时间： 2024-11-30 10:15:55
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
6页 484K
描述
Trans Voltage Suppressor Diode, 400W, 60V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

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SMAJ60E3/TR13 数据手册

 浏览型号SMAJ60E3/TR13的Datasheet PDF文件第2页浏览型号SMAJ60E3/TR13的Datasheet PDF文件第3页浏览型号SMAJ60E3/TR13的Datasheet PDF文件第4页浏览型号SMAJ60E3/TR13的Datasheet PDF文件第5页浏览型号SMAJ60E3/TR13的Datasheet PDF文件第6页 
SMAJ5.0e3 to SMAJ440CAe3  
400W Transient Voltage Suppressor (TVS) protection device  
Main product characteristics  
VWM  
VBR(min) - VBR(max)  
IPP  
5.0V – 440V  
6.40V – 543V  
41.7A – 0.6A  
9.6V – 713V  
400W  
RoHS  
COMPLIANT  
VCL(MAX)  
PPP  
DO-214AC (SMA)  
Description and applications  
This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or  
radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response  
time of clamping action is virtually instantaneous. As a result, they may also be used effectively for protection from  
ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments and induced RF. They can  
also be used for protecting other sensitive components from secondary lightning effects per IEC61000-4-5 and class  
levels defined herein. Microsemi also offers numerous other TVS products to meet higher and lower power demands  
and special applications.  
•
•
•
RoHS compliant (2002/95/EC), MSL level 1 (J-STD-020)  
Qualified to automotive grade – AEC Q101  
Bi-directional devices are denoted by the suffixes C or CA, electrical characteristics apply in both directions.  
Maximum ratings and characteristics(1)  
Symbol  
PPPM  
Parameter  
Value  
400  
Unit  
W
Peak power dissipation with a 10/1000µs waveform (2)(3) (fig.1)  
Peak pulse current with a 10/1000µs waveform (2) (fig. 3)  
IPPM  
See next table  
A
Steady state power dissipation at TL = 75ºC, lead lengths 0.375”  
PM(AV)  
IFSM  
VF  
1.0  
40  
W
A
(9.5mm) (3)  
Non repetitive peak forward surge current  
(8.3ms single half sine wave) unidirectional only (4)  
Maximum instantaneous forward voltage at 25A for unidirectional  
only (5)  
3.5 / 5.0  
V
RΘJL  
RΘJA  
TSTG  
TJ  
Typical thermal resistance junction to lead  
Typical thermal resistance junction to ambient  
Storage temperature  
30  
ºC/W  
ºC/W  
ºC  
120  
-55 to +150  
-55 to +150  
Junction temperature  
ºC  
(1) All ratings at 25ºC unless specified otherwise  
(2) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25ºC per Fig. 2. rating is 300W above 78V.  
(3) Mounted on copper pad area of 0.2” x 0.2” (5.0mm x 5.0mm)  
(4) Mounted on minimum recommended pad layout  
(5) VF=3.5V for devices of VBR < 220V and VF=5.0V maximum for devices of VBR > 220V  
Copyright © 2010  
Mar Rev C  
1/6  
www.Microsemi.com  
123456

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