Datasheet > SMAJ6.5A-Q1

SMAJ6.5A-Q1

更新时间： 2024-11-13 18:06:39

品牌	Logo	应用领域
安邦 - ANBON		/
页数	文件大小	规格书
5页	3823K
描述
SMA

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中文翻译

获取价格

数据手册

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SMAJ6.5A-Q1 数据手册

SMAJ-Q1 Series

Package outline

Features

• 400W peak pulse power capability with a 10/1000 μs

waveform, repetition rate (duty cycle): 0.01%.

SMA/DO-214AC

• Low profile surface mounted application in order to

optimize board space.

• Excellent clamping capability.

• Low incremental surge resistance.

• Fast response time from 0V to VBR, typically less than

1 ps for uni-directional & 5 ns for bi-directional types.

0.118(3.00)

0.096(2.45)

0.067 (1.70)

0.051 (1.30)

• Glass passivated chip junction.

• Lead-free parts meet RoHS requirments.

0.177(4.50)

0.157(3.99)

Compliant to Halogen-free

•

0.012(0.305)

0.006(0.152)

Suffix "-Q1" for AEC-Q101.

0.096(2.42)

0.078(1.98)

Mechanical data

0.060(1.52)

0.030(0.76)

• Epoxy:UL94-V0 rated flame retardant

• Case : Molded plastic, DO-214AC / SMA

• Terminals : Solder plated, solderable per

0.008(0.203)MAX.

0.208(5.28)

0.188(4.80)

MIL-STD-750, Method 2026

• Polarity : Indicated by cathode band

Dimensions in inches and (millimeters)

• Mounting Position : Any

Maximum ratings ^{(AT T}_A⁼²⁵^o^{C unless otherwise noted)}

Value

400

UNIT

Symbol

P_PPM

PARAMETER

CONDITIONS

Peak Power Dissipation

with a 10/1000 μs waveform,

Note 1, 2 & Fig. 1

with a 10/1000 μs waveform

at T_L=75^OC, Note 2

I_PPM

See Table 1

1.0

Peak Pulse current

Steady State Power Dissipation

P_M(AV)

8.3ms Single Half Sine-Wave, Note 3

Peak Forward Surge Current

I_FSM

V_F

at 25A

For Uni-Directional Types Only, Note 4

Maximum Instantaneours Forward Voltage

3.5/6.5

^OC

Operating temperature range

Storage temperature range

T_J

-55 ~ +150

T_STG

Note 1. Non-repetitive current pulse, per Fig. 3 and derated above T_A=25^OC per Fig. 2

2. Mounted on copper pad area of 0.2"x0.2" (5.0x5.0 mm) per Fig 5

3. Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum

4. V_F< 3.5V for V_BR< 200V and V_F< 6.5V for V_BR>201V.

http://www.anbonsemi.com

TEL:+86-755-23776891

FAX:+86-755-81482182

Document ID

AS-1080002

Issued Date

2018/03/08

Revised Date

2023/10/12

Revision

Page.

Page 1

12 3 4 5

中文翻译

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与SMAJ6.5A-Q1相关器件

型号	品牌	获取价格	描述	数据表
SMAJ6.5A-T3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 400W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMAJ6.5A-TP	MCC	获取价格	Trans Voltage Suppressor Diode, 400W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMAJ6.5ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMAJ6.5A-TR	STMICROELECTRONICS	获取价格	TRANSILTM
SMAJ6.5C	UNSEMI	获取价格	Surface Mount Transient Voltage Suppressors
SMAJ6.5C	UNIOHM	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
SMAJ6.5C	SECOS	获取价格	400W Peak Power Surface Mount TVS
SMAJ6.5C	BYTESONIC	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
SMAJ6.5C	HY	获取价格	SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS
SMAJ6.5C	LITTELFUSE	获取价格	功能与特色: 无卤素，且符合RoHS标准表面封装可优化面板空间小尺寸封装内置式应力消

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