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SMAJ33HE3/5A

更新时间： 2024-11-15 13:39:59
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 117K
描述
Trans Voltage Suppressor Diode, 33V V(RWM), Unidirectional,

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中文翻译

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SMAJ33HE3/5A 技术参数

是否Rohs认证：符合生命周期：Obsolete
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.82
Is Samacsys：N击穿电压标称值：40.8 V
最大钳位电压：59 V二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码：e3湿度敏感等级：1
极性：UNIDIRECTIONAL最大重复峰值反向电压：33 V
子类别：Transient Suppressors表面贴装：YES
端子面层：Matte Tin (Sn)Base Number Matches：1

SMAJ33HE3/5A 数据手册

 浏览型号SMAJ33HE3/5A的Datasheet PDF文件第2页浏览型号SMAJ33HE3/5A的Datasheet PDF文件第3页浏览型号SMAJ33HE3/5A的Datasheet PDF文件第4页浏览型号SMAJ33HE3/5A的Datasheet PDF文件第5页浏览型号SMAJ33HE3/5A的Datasheet PDF文件第6页 
SMAJ5.0 thru SMAJ188CA  
Vishay General Semiconductor  
Surface Mount TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available inuni-directional and bi-directional  
• 400 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty  
cycle): 0.01 % (300 W above 78 V)  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
DO-214AC (SMA)  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VWM  
5.0 V to 188 V  
400 W, 300 W  
40 A  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive and  
telecommunication.  
PPPM  
IFSM  
TJ max.  
150 °C  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability  
rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, high reliability/  
automotive grade (AEC Q101 qualified)  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional use C or CA suffix (e.g. SMAJ10C,  
SMAJ10CA).  
Electrical characteristics apply in both directions.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3  
suffix meets JESD 201 class 2 whisker test  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
VALUE  
400  
UNIT  
W
Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1)  
Peak pulse current with a waveform (1)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
IPPM  
See next table  
40  
A
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2. Rating is 300 W above 78 V  
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal  
Document Number: 88390  
Revision: 29-Oct-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1
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SMAJ33HE3/5A 替代型号

型号 品牌 替代类型 描述 数据表
SMAJ33AHE3/5A VISHAY

类似代替

 TVS DIODE 33V 53.3V DO214AC

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